Guangjie Wu

ORCID: 0009-0003-9252-4281
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About
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Research Areas
  • Astro and Planetary Science
  • Astronomical Observations and Instrumentation
  • Planetary Science and Exploration
  • Historical Astronomy and Related Studies
  • Stellar, planetary, and galactic studies
  • Advanced Thermoelectric Materials and Devices
  • Chalcogenide Semiconductor Thin Films
  • Phase-change materials and chalcogenides
  • Ionosphere and magnetosphere dynamics
  • Solar and Space Plasma Dynamics
  • CCD and CMOS Imaging Sensors
  • Infrared Target Detection Methodologies
  • Remote Sensing and Land Use
  • History and Developments in Astronomy
  • Geomagnetism and Paleomagnetism Studies
  • Advanced Measurement and Detection Methods
  • Atmospheric Ozone and Climate
  • Gamma-ray bursts and supernovae
  • Advanced Sensor and Control Systems
  • Maritime and Coastal Archaeology
  • Isotope Analysis in Ecology
  • Astronomy and Astrophysical Research
  • Satellite Image Processing and Photogrammetry
  • Impact of Light on Environment and Health
  • Cervical Cancer and HPV Research

Chinese Academy of Sciences
1996-2025

Ningbo Institute of Industrial Technology
2022-2025

Wuhan University
2025

Chongqing Public Health Medical Center
2024

Chongqing Medical University
2024

Zhejiang University of Technology
2023-2024

Chongqing Three Gorges University
2012-2024

Fudan University
2023

National Astronomical Observatories
1998-2009

Purple Mountain Observatory
2002-2007

Abstract The good co‐existence of midgap state and valence band degeneracy is realized in Bi‐alloyed GeTe through the In‐Cd codoping to play different but complementary roles structure modification. In doping induces results a considerably improved Seebeck coefficient near room temperature, while Cd significantly increases mid‐high temperature region by promoting convergence. synergistic effects obviously increase density effective mass from 1.39 2.65 m 0 , corresponding carrier mobility...

10.1002/adfm.202212421 article EN Advanced Functional Materials 2022-12-30

As technology continues to advance, the automation of strawberry production and picking is an inevitable trend. To address pressing issues insufficient detection smaller strawberries misdetection resulting from intricate background images, improved recognition method based on YOLOv8n model was proposed. The improvements are as follows: (1) deletion 20 × pixel layer with a focus small target addition 160 were implemented reduce volume enhance network reconstruction. (2) In neck portion,...

10.1109/access.2024.3356869 article EN cc-by-nc-nd IEEE Access 2024-01-01

Abstract GeTe has been considered as a promising mid‐temperature thermoelectric (TE) candidate, but its zT value is severely limited by the excessive hole concentration and high thermal conductivity. Here, it demonstrated that TE properties of can be significantly improve defect engineering Sb‐Pb AgCuTe codoping. The codoping adopted to optimize carrier manipulate rhombohedral lattice distortion, leading valence band convergence enhanced power factor. alloying introduces multiscale phonon...

10.1002/adfm.202407818 article EN Advanced Functional Materials 2024-07-10

Abstract GeTe has good thermoelectric performance at relatively high temperatures, but the low‐symmetry structure near room temperature and phase transition limit its service stability for power generation applications. Here, properties mechanical hardness of are improved by microstructure manipulation engineering. The incorporation Cr, Pb, Sb into lattice modulates transition, increasing cubic fraction from 49% to 73% 300 K. These modifications introduce shear strains refined herringbone...

10.1002/smll.202500333 article EN Small 2025-02-21

A peak ZT of 2.1 at 773 K and a high average 1.61 (400–773 K) are obtained in the Sb–InSe codoped GeTe by synergistic effects structural modulation esonant level.

10.1039/d3ta04230h article EN Journal of Materials Chemistry A 2023-01-01

Abstract Due to the high intrinsic zT of≈1.0 by multi‐band valleys, GeTe‐based thermoelectric materials are promising for medium‐temperature applications. In this work, extraordinary role of new dopant Hg on electro‐phonon transport GeTe is comprehensively elucidated. According first‐principles calculations, doping can effectively reduce energy offset between light and heavy valence bands, increase density‐of‐states effective mass from 1.45 m 0 2.58 . Experimentally, (GeTe) 1‐ x (HgTe)...

10.1002/adfm.202419431 article EN Advanced Functional Materials 2024-12-19

In the present age, potential threat to space projects coming from some intense meteor storms has been noticed. Especially, increasing activities of mankind in for scientific, commercial and military purposes have led an increase safety-related problems about satellites, stations astronauts. Several new techniques observing meteors showers developed. However, how estimate even predict effect shower should be further studied. The initial definition a storm based on visual observations with...

10.1007/s11433-009-0167-1 article EN Science in China. Series G, Physics, mechanics & astronomy/Science in China. Series G, Physics, Mechanics & Astronomy 2009-07-01

10.1023/a:1006363802649 article EN Earth Moon and Planets 1998-01-01

10.1016/s0275-1062(02)00041-3 article EN Chinese Astronomy and Astrophysics 2002-01-01

10.1016/s0275-1062(02)00059-0 article EN Chinese Astronomy and Astrophysics 2002-04-01

10.1016/j.chinastron.2004.09.006 article EN Chinese Astronomy and Astrophysics 2004-10-01

10.1016/0275-1062(87)90021-x article EN Chinese Astronomy and Astrophysics 1987-03-01

The spin dynamic process of the IrMn/CoFe system has been investigated by time-resolved magneto-optical Kerr effect. It is found that both pumping and interfacial exchange spring effect between IrMn CoFe layers contribute to total effective Gilbert damping. With increase in layer thickness (tIrMn), saturated damping factor initially increases subsequently starts decline beyond 2.4 nm. results demonstrate drops due system, where features additionally as a source when antiferromagnetic order...

10.1021/acsaelm.3c00215 article EN ACS Applied Electronic Materials 2023-04-10
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