We present a model which accounts for the dramatic evolution in microstructure of electroplated copper thin films near room temperature. Microstructure occurs during transient period hours following deposition, and includes an increase grain size, changes preferred crystallographic texture, decreases resistivity, hardness, compressive stress. The is based on boundary energy fine-grained as-deposited providing underlying density drives abnormal growth. As size increases from value 0.05–0.1 μm...

Abstract Residual stresses are found in the majority of multilayer thin film structures used modem technology. The measurement and modeling such stress fields elucidation their effects on structural reliability device operation have been a “growth area” literature, with contributions from authors various scientific engineering disciplines. In this article residual X-ray diffraction techniques is reviewed interpretation data relationship to mechanical concerns discussed. Key Words:...

Thin films of W have application in semiconductor interconnect structures as diffusion barriers and potentially seed layers for electroplating. been deposited by sputtering [physical vapor deposition (PVD)] at near-room temperature, using Ar the working gas, evaluation electrical structural properties thickness range 3 to 150 nm. Films 45 nm or greater are composed alpha (bcc) phase (only) with an resistivity 12 μΩ cm. thicknesses below 5 mostly beta (A15 cubic) as-deposited significantly...

Microscale Laser Shock Peening (LSP), also known as Processing, is a technique that can be potentially applied to manipulate residual stress distributions in metal film structures and thus improve the fatigue performances of micro-devices made such films. In this study, microscale LSP copper films on single crystal silicon substrate investigated. Before after-process curvature measurement verifies sizable compressive induced thin using LSP. Improved modeling work shock pressure summarized...

Electromigration-induced stress distributions in 200 μm long, 10 wide aluminum conductor lines 1.5 SiO2 passivation layers have been investigated real time using synchrotron-based white-beam x-ray microdiffraction. The results show that a steady-state linear gradient along the length of line developed within first few hours electromigration and could be manipulated by controlling magnitude direction current flow. From density dependence gradient, effective valence Z* was determined to 1.6 at...

Heteroepitaxial thin-film features that are lattice matched to the underlying substrate undergo elastic relaxation at free edges of feature. To characterize degree relaxation, we employed synchrotron-based x-ray diffraction techniques map change in spacing thin film a submicron resolution. Measurements were conducted on 0.24-μm thick, heteroepitaxially grown SiGe strips various widths Si (001). A comparison peak positions across provides real-space mapping extent as function linewidth. The...

A new simplified contact model aimed at capturing the load transfer and recovery length in parallel steel wires, commonly used main cables of suspension bridges, is presented. The approach based on placing elastic–perfectly plastic spring elements region between objects. These springs have varying stiffness (Model I) or yielding II) depending their proximity to clamping loads. Their highest when they are closer this force, it decays farther away from clamp. This decayed behavior assigned...

Radiation induced structural damage is observed in silicon-on-insulator (SOI) and SiGe on SOI samples illuminated with monochromatic (11.2keV) x-ray microbeams approximately 250nm diameter. The diffraction peaks from the irradiated layers irreversibly degrade time, indicating permanent to crystal lattice. size of damaged regions almost an order magnitude larger than beam size. decreases as one moves away center volume. We discuss threshold dosage required for initiation possible mechanisms damage.

Thickness data from semiconductor-grade silicon-on-insulator thin-film samples determined high-resolution X-ray diffraction (HRXRD) using the Scherrer equation, rocking-curve modeling, thickness fringe analysis, Fourier analysis and Warren–Averbach method, as well with cross-sectional transmission electron microscopy reflectivity measurements, are presented. The results show that absolute accuracy of values obtained HRXRD is approximately 1 nm for all techniques if sources broadening...

The results of an x-ray diffraction study dc-magnetron sputtered tungsten thin films are reported. It is shown that the phase transformation from β to α W can cause multilayered single-phase where layers have very different stress states even if in 500 nm thickness range.

The strain imparted to 60 nm wide, silicon-on-insulator (SOI) channel regions by heteroepitaxially deposited, embedded silicon-carbon (e-SiC) features was measured using x-ray microbeam diffraction, representing one of the first direct measurements lattice parameter conducted in situ an SOI device channel. Comparisons closed-form, analytical modeling measured, depth-averaged distributions show close correspondence for e-SiC but 95% predicted Mechanical constraint due overlying gate and...

The data obtained from bulk test specimens are often used in deformation models to predict the mechanical response of actual parts that very different size and shape, such as solder joints large scale integration (VLSI) surface mount components. Such predictions valid only if exceeds "representative volume" specimens, In a previous article, we reported representative volume Pb-Sn eutectic alloy specimen function applied (uniaxial) tensile strain, showed was much larger than common technology...

The data obtained from bulk test specimens are often used in deformation models to predict the mechanical responses of parts that very different size and shape, such as solder joints VLSI surface mount components. Such predictions valid only if exceeds representative volume specimens. In present study, measurement was performed for a single-phase alloy (98Pb-2Sn wt.%) deformed both tension cyclic loading. Deformation 98Pb-2Sn at room temperature shown be extremely inhomogeneous tensile...

Microscale Laser Shock Peening (LSP) is a technique that can be potentially applied to manipulate the residual stress distributions in metal film structures and thus improve reliability of micro-devices. This paper reports high-spatial-resolution characterization shock treated copper thin films on single-crystal silicon substrates, where scanning x-ray microtopography used map relative variation stress/strain field with micron spatial resolution, instrumented nanoindentation measure...

Rotation and strain fields were mapped across silicon-on-insulator (SOI) regions induced by overlying stressed Si3N4 features using x-ray nanobeam diffraction. The distribution in SOI tilt exhibited an antisymmetric with a maximum magnitude of 7.9 milliradians, representing one the first direct measurements lattice conducted situ within buried layers spot size less than 100 nm. measured rotation corresponds to simulated values generated boundary element method modeling, indicating that...