A5101762060- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Particle accelerators and beam dynamics
- Spectroscopy and Laser Applications
- Particle Accelerators and Free-Electron Lasers
- Laser Design and Applications
- Nanowire Synthesis and Applications
- Gyrotron and Vacuum Electronics Research
- Nuclear Physics and Applications
- GaN-based semiconductor devices and materials
- Superconducting Materials and Applications
- Pulsed Power Technology Applications
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Radio Frequency Integrated Circuit Design
- Particle Detector Development and Performance
- Gas Sensing Nanomaterials and Sensors
- Optical properties and cooling technologies in crystalline materials
- Electrostatic Discharge in Electronics
- Analog and Mixed-Signal Circuit Design
- Semiconductor Lasers and Optical Devices
- Advanced Materials and Semiconductor Technologies
- Magnetic confinement fusion research
- Integrated Circuits and Semiconductor Failure Analysis
- Atmospheric Ozone and Climate
RadiaBeam Technologies (United States)
2023-2025
Ioffe Institute
2013-2023
The Ohio State University
2010-2014
Joint Institute for Nuclear Research
2006-2014
Russian Academy of Sciences
1986-2013
Physico-Technical Institute
2001-2013
Analog Devices (United States)
2012
Carleton University
2004
Beam injection systems in hadron colliders require kickers generating ±50 kV peak voltages into a 50 Ω impedance, with currents of 1000 A and sub-10 ns rise fall times. This paper presents novel high-voltage pulse power generator utilizing distributed pulser architecture. It combines gallium nitride (GaN) transistors Marx topology an inductive adder, achieving nanosecond-scale switching speeds high-power efficiency. Compared to other solutions such as based on MOSFETs or fast ionization...
The “Nuclotron-M” project started in 2007 is considered as the key point of first stage NICA/MPD project. General goal to prepare all systems Nuclotron for its long and reliable operation a part NICA collider injection chain. Additionally realization will increase ability current experimental program. Results last runs are presented.
We report on the observation of superlinear electroluminescence (EL) in nanoheterostructures based GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb quantum well (QW) active region, grown by metal organic vapor phase epitaxy. Electroluminescence spectra for different driving currents were measured at temperatures 77 and 300 K. It is shown that such structure exhibits dependence optical power drive current its increase 2–3 times range 50–200 mA. This occurs due to impact ionization...
A flowing gas, optically pumped, CO laser has been designed and built. The made to operate on the fundamental (≈5 μm) infrared bands of vibrational states. is powered by absorption continuous wave radiation from an electric-discharge-excited laser. With this system, kinetics establishment maintenance strong population inversions in at temperatures above 300 K studied, independently complications electron impact processes other chemical channels which are present electric discharge lasers....
This paper proposes a switched-capacitor Adaptive Level-Shifting (ALS) technique for Instrumentation Amplifiers (IA). When used at the front end of an IA ALS circuit enables true rail-to-rail input common-mode (CM) range and reduces CMRR requirements following IA. In proposed implementation, two circuits are combined with stages Indirect Current-Feedback (ICF) To overcome limited differential voltage such IAs, cross-connected. As result has wide CM range. The is fabricated in 0.18 <formula...
Industrial human-portable X-ray sources are widely used by security, nuclear safeguard, and defense agencies. However, the employed have significant energy, dose, size, weight, power (SWaP) limitations, greatly affecting their practical application. RF linear accelerators (linacs) can serve as a flexible, reliable, robust type of source if they match cost, imaging performance requirements conventional ones. One most critical elements these parameters is high-voltage pulsed supply system or...
Abstract Electron accelerators operating at energies in the MeV range and kW power levels are used for many industrial applications, including medical device sterilization, nondestructive testing cargo inspection, radiotherapy. However, of these especially novel ones, require that size, weight, costs significantly reduced to be considered as a suitable source radiation. Some examples such applications include field radiography, mobile radioactive replacement irradiation. The dramatic level...
Mid-infrared photovoltaic detector (PD) designed on the base of a type II p-InAs/p-GaSb asymmetric heterostructure with deep AlSb/InAsSb/AlSb quantum well (QW) at interface is reported. The heterostructures containing single QW were grown by LP-MOVPE. Transport, electroluminescent and photoelectrical properties these structures investigated. Intense both positive negative electroluminescence was observed in spectral range 3-4 μm above room temperature (300-400 K). Spectral response...
Intense mid-infrared (λ∼2μm) room temperature electroluminescence from metal organic vapor phase epitaxy (MOVPE) grown type-I single AlSb∕InAsSb∕AlSb quantum wells (QWs) is reported. The spectral position of the electroluminescent peaks in good agreement with k∙p envelope function calculation frame four-band Kane’s model taking into account intermixing s and p states deep well. A four times increase emission intensity increasing 77to300K can be explained by highly efficient radiative...
We report on study of electrical and optical properties type II heterostructures with InSb quantum dots (QDs) inserter into the InAs-based p-n junction made by LPE-MOVPE combine method. QDs were grown an InAs(100) substrate LPE. Overgrowth surface self-assembled QD arrays was performed MOVPE using capping layers based binary InAs quaternary InAsSb solid solutions. High-resolution cross-sectional image buried InAs(Sb,P) matrix obtained for first time transmission electron microscopy....
Experiments on beam extraction from the Nuclotron, a superferric heavy ion synchrotron, were carried out last year and in March, 2001. The resonance Qx=20/3, used for horizontal betatron amplitude growth, provides entering electrostatic septum deflector, where it obtains an initial deflection to avoid losses of Lambertson Magnet. latter bends vertical plane level experimental halls. An coefficient about 70% spill time 0.4 s obtained first experiments performed at deuteron energy 200 MeV/amu...
We report on superlinear electroluminescent structures based AlSb/InAs1−xSbx/AlSb deep quantum wells grown by MOVPE n-GaSb:Te substrates. Dependence of the electroluminescence (EL) spectra and optical power drive current in nanoheterostructures with well at 77–300 K temperature range was studied. Intensive two-band EL 0.5–0.8 eV photon energy observed. Optical enhancement increasing room is caused contribution additional electron-hole pairs due to impact ionization electrons heated high...
In this paper, we present the performance of 72 MHz 18 kW RF power source developed for cyclotrons. The machine is equipped with 9 class-AB amplifier modules (each up to 2 output) based on highly reliable LDMOS transistors. whole system arranged inside a single 19 cabinet and has coaxial 50 Ω output. test environment high measurement results are described.