A5071024780- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Acoustic Wave Resonator Technologies
- Ultrasonics and Acoustic Wave Propagation
- Electromagnetic Compatibility and Noise Suppression
- Electrical Contact Performance and Analysis
- Copper Interconnects and Reliability
- HVDC Systems and Fault Protection
- Perovskite Materials and Applications
- Semiconductor Quantum Structures and Devices
- Vacuum and Plasma Arcs
- Advanced Photocatalysis Techniques
Zhejiang University
2024-2025
Corning (United States)
2007
Dow Chemical (Japan)
2006
Purdue University West Lafayette
2000-2003
Indiana University – Purdue University Indianapolis
2002
This Letter demonstrates a high-performance 3.3 kV-class β-Ga2O3 vertical heterojunction diode (HJD) along with an investigation into its off-state leakage mechanism. The HJD field plate assisted deep mesa (FPDM) termination was fabricated using self-aligned technique to etch the depth of 9 μm, thereby reducing electric crowding at anode edge. In addition, thick dielectric is deposited fill trench, facilitating utilization further reduce TCAD (Technology Computer Aided Design) simulations...
This work demonstrates vertical <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 Schottky Barrier Diodes (SBDs) with a field plate assisted deep mesa termination. The notation="LaTeX">$9~\mu \text{m}$ is etched using self-aligned technique to mitigate electric crowding at the anode edge. Additionally, dielectric combination of 100nm Al2O3 and...
Deep mesa is an effective edge termination widely deployed in high-voltage power devices. However, its effectiveness requires the minimal distance between and electrode susceptible to charges dielectric passivation, posing challenges practical implementation. Here, we propose a deep encapsulated by p-type materials, which functions as reduced-surface-field (RESURF) structure enables wide design process window. We demonstrate RESURF-mesa vertical Ga3O3 diodes. In this design, 5 μm mesa,...
Generation lifetimes and interface state densities of n-type 4H-SiC metal oxide semiconductor (MOS) capacitors are characterized by using the pulsed MOS capacitor technique. A decrease in lifetime increase density occurs when devices negatively biased at 400°C. This behavior is consistent with an effect seen Si∕SiO2 known as negative bias temperature instability. portion degradation caused this can be recovered removing well positively biasing device.
Hexagonal GaN films have been grown on Si(100) substrates by employing a sputtered AlN buffer layer followed another high-temperature metalorganic chemical vapor deposition (MOCVD) layer. The highly oriented structure of provides hexagonal template for subsequent and growth. are evaluated transmission electron microscopy, selected area diffraction, x-ray photoluminescence exhibit purely columnar structure. orientation the columns depends thickness both MOCVD surface is shiny crack free up to...
The impact of the post-trench restoration on electrical characteristics vertical GaN power devices is systematically investigated in this work. Following achievement microtrench-free trench structure with modified dry etching conditions, tetramethylammonium hydroxide (TMAH)-based wet and UV/Ozone-based oxidation process are employed to further refine profile. It shown that c-plane bottom restored level unetched surface, as evidenced by improved Schottky interface. Additionally, treatment...
We report on the localization of acoustic waves in GaN-AlN heterolayers deposited Si that lead to observation, by Brillouin light scattering, distinctive guided excitations associated with hexagonal $(2H)$ GaN epilayers. These elastic modes include longitudinal resonance (LGR) propagating parallel film surface and a shear horizontal (SHR) polarized plane surface. The observation scattering arise from strong elasto-optic properties thin films as well presence AlN acts barrier reducing energy...
Abstract The Floating Island (FI) structure in 4H-SiC device is able to break the “SiC 1D-Limit”. This achieved by transforming electric field distribution drift region from a single-triangle profile into multiple-triangle profile, both of which have same triangle height and width. With such an distribution, trade-off between breakdown voltage (BV) specific ON-resistance (R ON,sp ) can be significantly improved. In this paper, FI Junction Barrier Schottky (JBS) diodes with four different...
Use of an AlN buffer layer is enabling technique for the epitaxial growth GaN on Si(111) substrates. The temperature has been shown to be a significant factor that affects properties film and AlGaN/GaN heterostructure. grown at 1155/spl deg/C exhibited uniform sized, preferred-oriented highly faceted grain microstructure led subsequently films with better quality than those other temperatures. evaluated included photoluminescence properties, surface planarity, Hall mobility strain.
The buffer layers used in this study included an AlN/3C-SiC composite film stack and a single AlN layer. 3C-SiC the prepared by 2-step process functioned better as layer than that direct epitaxial growth. method was compared with buffer. GaN films grown on were significantly less susceptible to cracking those Photoluminescence evaluation showed deposited narrower FWHM However, AlGaN top of smoother surface had higher electron mobility AlGaN/GaN heterojunction. Surface qualities improved...