A5028205031- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Silicon and Solar Cell Technologies
National Engineering Research Center of Electromagnetic Radiation Control Materials
2024
University of Electronic Science and Technology of China
2024
Sichuan University
2021
A novel GaN current-aperture vertical electron transistor (CAVET) with an energy band pinning (EBP) structure (EBP-CAVET) is proposed and investigated by simulations. The EBP-CAVET featured hybrid contacts on the p-GaN layer, locally having Ohmic contact combined Schottky gate metals in longitudinal direction. shorted to source electrode are electrode. conduction (Ec) region modulated alternately arranged contacts. In region, Ec remains a fixed value, which acts as suppresses variation of...
In present research work, the combined influence of gamma irradiation and annealing treatment on ROHMSCS106AG 4H-SiC Schottky Barrier diode (SBD) are investigated. The samples irradiated with 60Co γ-rays varying up to 30 kGy, placed at room temperature (RT, 300 K) for 168 hours tested again. current-voltage (I-V), capacitance-voltage (C-V) deep level transient spectroscopy (DLTS) examined. I-V C-V measurements clearly indicate that ideality factor doping concentration increase radiation...