A5088274046- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Copper-based nanomaterials and applications
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Multiferroics and related materials
- Ion-surface interactions and analysis
- Gas Sensing Nanomaterials and Sensors
- Advanced Surface Polishing Techniques
- Diamond and Carbon-based Materials Research
- Photonic and Optical Devices
- solar cell performance optimization
- Laser Material Processing Techniques
- Acoustic Wave Resonator Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Magnetic and transport properties of perovskites and related materials
- Advanced optical system design
- Microwave and Dielectric Measurement Techniques
- Magnetic Properties and Synthesis of Ferrites
- Optical measurement and interference techniques
- Ga2O3 and related materials
Université de Strasbourg
2015-2025
Centre National de la Recherche Scientifique
2015-2025
Laboratoire des Sciences de l'Ingénieur, de l'Informatique et de l'Imagerie
2014-2024
Institut d'Électronique et des Systèmes
2005-2012
Laboratoire de Chimie de Coordination
2002
Anna Needs Neuroblastoma Answers
1991
Silicon clathrates are allotropes of silicon that show great promise for optoelectronics and batteries. However, in the form films relatively new, devices based on this material still have to be engineered. In work, we present a protocol clathrate film fabrication does not necessitate glovebox. We dense can obtained with pressure annealing treatment measured by atomic force microscopy. Ion implantation P, B As is performed films. Early photovoltaic presented, maximum short circuit current...
Type I and type II silicon clathrates are guest-host structures made of polyhedral cages large enough to contain atoms that can be either inserted or evacuated with only a slight volume change the structure. This feature is interest not for batteries storage applications but also tuning properties clathrate films. The thermal decomposition process tuned obtain Na8Si46 Na2<x<10Si136 films on intrinsic p-type c-Si (001) wafer. Here, from unique synthesized NaxSi136 film, range resistivity...
The photonic nanojet (PNJ) generated by a shaped optical fiber tip is an attractive technology for laser micro-machining. working distance has the same order of size as core diameter; therefore, multimode (MM) fibers are generally preferred. However, PNJ due to fundamental mode and, energy coupled on high-order modes does not contribute process. We demonstrate benefit large-mode-area (LMA) in generation PNJ. A homemade 40 μm field diameter LMA compared with 100/140 MM-shaped tip. Similar...
KBiFe2O5 (KBFO) was grown by pulsed laser deposition (PLD) on SrTiO3 (001) (STO), 1 at. % Nb–SrTiO3 (Nb-STO) and MgAl2O4 (MAO). In the case of MAO substrate, epitaxial growth is obtained. As its bandgap relatively low (1.6 eV in bulk), KBFO a promising candidate for oxide photovoltaics. this work we examine PLD looking at structure composition, investigate optical properties films A photovoltaic architecture based proposed, solar cell behavior absorber
Here we have investigated the hydrogenation process of thin film polycrystalline n+pp+ silicon cells using MW-ECR plasma in a standard PECVD system. Influence various parameters such as power, temperature and hydrogen flow on sheet resistance n+ emitter region open-circuit voltage structure were investigated. The n+- type regions obtained by phosphorous diffusion spin-on dopant P507 or P509 solutions from Filmtronics. For both levels doping, poly-Si mesa increases with increasing power...
In this work, we report recent results of solar cells fabricated on silicon foils obtained by the Stress induced LIft-off Method (SLIM)-cut technique using an epoxy stress-inducing layer. Indeed, use for production offers ability to reduce material costs while allowing potentially a higher conversion efficiency. We show experimentally that foil thicknesses between 40 and 140 μm can be tuned changing thickness epoxy. Standalone based have been realized, efficiencies 12.5% 13.8% measured 55...
This work reports on the fabrication of silicon tunnel junctions that can be used in silicon-based bottom cells for tandem solar cells. The junction was formed n-type monocrystalline wafers using following two different processes: (1) a thermal diffusion boron followed by an arsenic ion implantation; and (2) successive implantation steps ions. For both processes, rapid annealing step to activate dopants cure defects generated implantation. activated dopant distribution across determined...
Measuring surface roughness accurately at the micro and nano scale presents several challenges. While optical techniques can be used to rapidly measure large areas, significant variations found between results from different on similar samples. In present work, a comparison has been made of two systems using interference microscopy AFM make measurements same place sample. Two samples were prepared silicon wafers by marking them with multi-scale pattern photoresist process lithography an...
The realization of crystalline silicon thin films on foreign substrates is an attractive alternative to the ingot casting aiming at a reduction in total costs. purpose this work form polycrystalline using crystallization amorphous deposited aluminum (Al) substrates. Al-substrate used as catalyzer for but also conductive substrate and back reflector photovoltaic cell. 1-5 μm thick were carried out temperature 550 °C duration times from 10 80 min. crystallized then characterized by Raman...
Abstract In the present study, effect of hydrogen dilution in amorphous silicon on its crystallization kinetics and defect distribution using AIC has been studied. The a ‐Si films were deposited at different ratios H 2 /(H +SiH 4 ) plasma enhanced chemical vapour deposition (ECR‐PECVD) glass‐ceramic substrates. thicknesses aluminium ‐Si:H 0.20 μm 0. 37 μm, respectively. bi‐layer structures annealed tube furnace 475 °C for 8 hours nitrogen atmosphere. results indicated that as increased from...
We investigated the formation of microcrystalline silicon (μc-Si:H) epitaxially grown on polysilicon seed layer aluminium(Al) substrate using Electron cyclotron resonance plasma enhanced chemical vapor deposition method (ECR-PECVD). The μc-Si:H film serves as an active intrinsic absorber for a PIN configuration solar cell. A (P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ) was created by depositing amorphous ECR-PECVD (using SiH <inf...