A5053514008- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced SAR Imaging Techniques
- Domain Adaptation and Few-Shot Learning
- Wireless Signal Modulation Classification
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Neural Network Applications
- Industrial Vision Systems and Defect Detection
- Radar Systems and Signal Processing
- Astronomical Observations and Instrumentation
- CCD and CMOS Imaging Sensors
- Image Enhancement Techniques
- Infrared Target Detection Methodologies
Guangzhou University
2024-2025
The University of Texas at Austin
2005-2008
Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs HfO2-based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n-channel MOSFETs on semi-insulating substrate clearly show surface modulation and excellent current control by gate bias. threshold voltage of ∼0.5V, the transconductance ∼0.25mS∕mm, subthreshold swing ∼130mV/decade, drain ∼162μA∕mm (normalized to length 1μm) at Vd=2V Vg=Vth+2V obtained. In comparison...
In this letter, we present electrical characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs) on n- and p-type GaAs, In0.53Ga0.47As, InAs, InSb substrates, along with the effect a thin germanium interfacial passivation layer. We found that MOSCAPs all n-type substrates showed good C-V small frequency dispersion (<10% <200 mV). However, GaAs In0.53Ga0.47As exhibited poor implying severe Fermi level pinning, as has also been seen for InP substrate. On other...
In this work, using Si interface passivation layer (IPL) we present the electrical characteristics of TaN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /GaAs both p-and n-MOSFET made on GaAs substrates with excellent and reliability characteristics, thin EOT (~2.3-3.0nm), low frequency dispersion (< 5%) high maximum mobility (1213 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V-s) temperature PMA for undoped GaAs....
Recently, the authors have investigated GaAs metal-oxide-semiconductor field-effect transistor using Si interface passivation layer (IPL) and HfO2 as gate dielectric. In this work, they InGaAs MOSCAP same oxide of insulator with IPL. studied effects postdeposition anneal (PDA) time IPL on electrical characteristics capacitor high-k (HfO2) material InGaAs. Excellent thin equivalent thickness (∼2.5nm), low frequency dispersion (&lt;5%) been obtained. The PDA were correlated C-V characteristics.
This work investigates the flatband voltage instability of HfO2-based GaAs metal-oxide-semiconductor (MOS) capacitor with a thin germanium (Ge) interfacial passivation layer (IPL). Both positive and negative dc gate biases are used as stress condition. By studying various samples such devices extremely equivalent oxide thickness 8.7Å, optimum, thick Ge IPLs, without IPL at given HfO2 thickness, well varying thicknesses on optimum it is found that both interface trap bulk crucial in affecting...
In this work, we studied the effects of postdeposition anneal (PDA) time and Si interface passivation layer on material electrical characteristics metal-oxide-semiconductor (MOS) capacitor with high-k (HfO2) different orientation substrates (100), (110), (311). The interfacial change HfO2∕Si∕GaAs gate stacks after PDA has been characterized using x-ray photoelectron spectroscopy (XPS) Dit measurement conductance method frequency dispersion. XPS shows formation gallium arsenic oxides...
The electrical characteristics of HfO2-based n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) and capacitors (MOSCAPs) on high indium content In0.53Ga0.47As channel layers are presented. N-channel MOSFETs with a germanium (Ge) interfacial passivation layer (IPL) show maximum mobility 3186 cm2/V s from split capacitance-voltage (C-V) method the normalized drain current (to length 1 μm) 753 mA/mm at Vg=Vth+2 V Vd=2 V. On contrary, without Ge IPL or temperature post-metal...
The authors have demonstrated a n-type GaAs depletion-mode metal-oxide-semiconductor field-effect Transistor with normalized transconductance gm of 266mS∕mm, peak electron mobility 1124cm2V−1s−1, and low hysteresis. good device characteristics are attributed to the use amorphous silicon interface passivation layer HfO2 gate dielectric. pulse Id-Vg show that even higher channel (&gt;2000cm2V−1s−1) can be achieved by reducing interfacial bulk traps in stack.
Charge trapping and wearout characteristics of self-aligned enhancement-mode GaAs nMOSFETs with silicon interface passivation layer HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate oxide are systematically investigated at various time scales (from micro-seconds to seconds). Unlike high-kappa on devices, both bulk affect the PBTI (positive bias temperature instability) nMOSFETs. The comparison between pulsed I...
In this work, we studied the effects of postdeposition anneal (PDA) time on material and electrical characteristics metal-oxide-semiconductor capacitor (MOSCAP) with high-k (HfO2) high-indium-content In0.52Ga0.48As. Thin equivalent oxide thickness (EOT∼1nm) excellent capacitance voltage (C-V) has been obtained. Indium content in InGaAs PDA were correlated C-V TaN/physical vapor deposition HfO2∕InGaAs MOSCAPs. It was found that high indium resulted improved characteristics, EOT, hysteresis,...
Research on high-k (HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) materials has been expanded significantly. However, MOSFETs with gate dielectrics silicon still have several problems relatively low mobility of devices in thin EOT regime compared to the universal curve. In this work, as an alternative substrate, InP and xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub>...
Using a thin germanium interfacial passivation layer (IPL), for the first time we present surface channel n- and p-MOSFETs on GaAs substrate with TaN gate electrodes HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> dielectric films. We used self-aligned gate-last processes to fabricate MOSFETs semi-insulating substrate. The electrical results from buried channel-mode transistors are investigated. Both p-channel show excellent dc...
In this work, we present the effects of nitrogen-incorporation at top interface HfSiON gate dielectrics on dielectric charge trapping and time-dependent threshold voltage instability. The TSN (top silicon/nitrogen) structure was found to be useful in confining nitrogen near interface, which is effective blocking metallic impurity penetration from electrode, improving bottom layer quality thickness control.
To overcome the issues of mobility degradation and charge trapping in high-k MOSFET, a stacked Y <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (top)/HfO (bottom) multi-metal gate dielectric with TaN has been developed. Compared to HfO reference, new shows similar scalability, but superior device performance reliability characteristics. Channel mobility, fast transient trapping, bias...