A5100662514- Advanced ceramic materials synthesis
- Electrospun Nanofibers in Biomedical Applications
- Semiconductor Quantum Structures and Devices
- High-pressure geophysics and materials
- Thermal Expansion and Ionic Conductivity
- Boron and Carbon Nanomaterials Research
- Solid-state spectroscopy and crystallography
- Perovskite Materials and Applications
- Advanced Semiconductor Detectors and Materials
- Organic and Molecular Conductors Research
- MXene and MAX Phase Materials
- Semiconductor materials and devices
- Nonlinear Optical Materials Research
Nanjing University of Posts and Telecommunications
2023
National Yang Ming Chiao Tung University
2009
We have investigated the effect of postgrowth thermal annealing on electron emission from InAs quantum dots (QDs) containing a misfit-related defect state induced by strain relaxation. Additional carrier depletion in GaAs bottom layer near QD, caused state, can effectively suppress tunneling leading to observation QD ground conduction band with large energy 213 meV, contrast defect-free nonrelaxed QDs which an 58 meV first excited is observed. The reduced 193 and 164 after at 650 700 °C for...
Abstract Based on first-principles calculations, the structural, mechanical, electronic, and optical properties of K 2 TiBr 6 , an ordered double perovskite with numerous titanium base positions, are investigated under pressure conditions from 0 to 150 GPa. This research seeks thoroughly study changes in physical caused by evaluate applicability compound optoelectronic applications. The structural characteristic fits well published earlier research. A higher interaction between atoms is also...
Abstract The structure, electronic, and optical properties of bis(salicylaldehyde) crystal under 0–300 GPa pressure are calculated by density functional theory (DFT). By comparing the lattice parameters (i.e., constants, bond lengths, angles) different pressures, it is found that sensitive to change complicatedly with pressure. Furthermore, analysis electronic structure shows an indirect bandgap semiconductor at 0 becomes a conductor 115, 155, 185 GPa, respectively, where far- near-Fermi...