A5011410684- Graphene research and applications
- Semiconductor materials and devices
- 2D Materials and Applications
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Boron and Carbon Nanomaterials Research
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
- Organic Electronics and Photovoltaics
- Perovskite Materials and Applications
- Graphene and Nanomaterials Applications
Jiangsu University of Science and Technology
2023-2025
Yanshan University
2005
Two-dimensional iodine-based materials, characterized by unique structures and properties, hold immense potential in electronics. Here, research indicates that doping metal/nonmetal dopants with small atomic numbers can substantially improve the equilibrium electronic transport of new-type 2D device. Unlike metal dopants, such enhancement from nonmetallic varies greatly among elements, including sites. N remarkably exhibits best enhancement. Essentially, site doping, especially shows strong...
The effect of the tensile strain on non-equilibrium electronic properties are studied for ultra-thin SiC NWs (NWs) with different diameters. Results show that equilibrium conductance fluctuates strain, and maximum decreases increase size. Essentially, strong originates from large electron transmission delocalized states. For I–V characteristics, affects significantly growth rate intensity current. Under any biases, strongest current appears in late (0.7136) single-atom chain, while starting...
The influence of nanomechanical tensile behavior on electron transport is especially interesting for ultra-thin SiC nanowires (NWs) with different diameters. Our studies theoretically show that these NWs can hold stable transmission in some strain ranges and stretching enhance the around Fermi level (EF) at strains over 0.5 without fracture a single-atom chain not thicker NWs. For each size NW, has tiny effect number device density states (DDOSs) peaks but increase values. Freshly broken...
Special structures and prominent performance make 2D iodinene more appealing valuable at the molecular level. Here, new-type electronic devices have been constructed with iodinene-based nanoflakes in different sizes are theoretically studied for transport properties. Our findings reveal that possess great electron suppression, achieving same function as SiO
Calculations are performed on the stability and electronic structure of an ordered Si0.75Ge0.25C alloy within generalized gradient approximation using first-principles method. The is stable at zero pressure temperature, with its lattice constant 4.34 Å close to that cubic SiC bulk modulus 223 GPa. An analysis band density states shows be indirect semiconductor a wider gap compared therefore candidate material can function in heterostructure applications. When combined form bipolar...