A5091781108- Photonic and Optical Devices
- Optical Coatings and Gratings
- Optical measurement and interference techniques
- Metamaterials and Metasurfaces Applications
- Advancements in Semiconductor Devices and Circuit Design
- Photonic Crystals and Applications
- Advanced Antenna and Metasurface Technologies
- Optical Coherence Tomography Applications
- Semiconductor Quantum Structures and Devices
- Antenna Design and Analysis
- Nanowire Synthesis and Applications
Chinese Academy of Sciences
2017-2024
Chalmers University of Technology
2024
Institute of Software
2024
Shanghai Institute of Microsystem and Information Technology
2017
University of Chinese Academy of Sciences
2017
Abstract Independent controls of various properties electromagnetic (EM) waves are crucially required in a wide range applications. Programmable metasurface is promising candidate to provide an advanced platform for manipulating EM waves. Here, we propose approach that can arbitrarily control the polarization direction and phases reflected linear nonlinear ways using stacked programmable metasurface. Further, extend space-time-coding theory incorporate dimension polarization, which provides...
GeSn thin films on Ge (001) with various Sn concentrations from 3.36 to 7.62% were grown by molecular beam epitaxy and characterized. The structural properties analyzed reciprocal space mapping in the symmetric (004) asymmetric (224) planes high resolution X-ray diffraction (XRD). lateral correlation length (LCL) mosaic spread (MS) extracted for epi-layer peaks diffraction. With increase of concentration, LCL reduces while MS increases, indicating degrading crystalline quality. Dislocations...
In recent years, optical systems near the diffraction limit have been widely used in high-end applications. Evidently, an analytical solution of point spread function (PSF) will help to enhance both understanding and dealing with imaging process. This paper analyzes Fresnel diffraction-limited defocused conditions. For this work, PSF was obtained using series expansion confluent hypergeometric functions. The expression transfer is also presented herein for comparison PSF. Additionally, some...
We present our recent researches on novel group IV nano- and micro-structures for potential light sources Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films microstructures, Ge(Sn) nanowires. Tensile-strained QDs were grown by SS-MBE, photoluminescence was achieved. The demonstrated with Sn concentration above bandgap transition critical point, partially suspended microstructures fabricated relaxing compressive strain.