A5072986848- Near-Field Optical Microscopy
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Force Microscopy Techniques and Applications
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Quantum and electron transport phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Surface and Thin Film Phenomena
- Plasmonic and Surface Plasmon Research
- Nanowire Synthesis and Applications
- Optical Network Technologies
- Advancements in Photolithography Techniques
- Non-Destructive Testing Techniques
- Semiconductor Lasers and Optical Devices
- Advanced Thermodynamics and Statistical Mechanics
- Advanced Thermoelectric Materials and Devices
- Spectroscopy and Laser Applications
- Thermal properties of materials
- Photonic Crystals and Applications
- Surface Roughness and Optical Measurements
- GaN-based semiconductor devices and materials
Bar-Ilan University
2021-2024
Jerusalem College of Technology
2019-2024
Institut polytechnique de Grenoble
2019
Université Grenoble Alpes
2019
A wide palette of nanoscale imaging techniques operating in the near-field regime has been reported to date, enabling an important number scientific breakthroughs. While tuning and benchmarking microscopes represent a very step for optimizing outputs sessions, no generally acknowledged standards exist yet terms calibration microscopes, which would play role fully exploiting potential these instruments. With this work, we aim contribute filling gap, by introducing prototypical sample, that...
A thorough understanding of biological species and emerging nanomaterials requires, among other efforts, their in-depth characterization through optical techniques capable nanoresolution. Nanoscopy based on tip-enhanced effects have gained tremendous interest over the past years, given potential to obtain information with resolutions limited only by size a sharp probe interacting focused light, irrespective illumination wavelength. Although popularity number applications is rising, nanoscopy...
In this paper, we present the design of a silicon optoelectronic device capable speeding up processing capabilities. The data in are electronic, while modulation control is optical. It can be used as building block for development optical by silicon-based processors based on typical microelectronics manufacturing processes. A V-groove-based structure fabricated part allows obtaining enhanced sensitivity to polarization photonic signal and thus polarization-sensitive modulator.
Ultra-fast electrical switches activated with an optical-polarized light trigger, also called photo-polarized switches, are presented. A set of new transistor circuits is switched by from above, illuminating deep V-grooves, whose angle sensitive to the polarization incident. Thus, this application may serve for encryption/decryption devices since strongest responsivity only obtained very specific spatial directions illumination beam. When V-groove sufficiently narrow, device mainly responds...
GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW) have shown in the past multiple advantages domain of inter-sub-band transition (ISBT) while serving as basic structures for advanced electro-optical devices. A new approach enables to create and control modulation Self-Induced Electrical Fields (SIEF), a function dopant concentration variation structure. Combined numerical analytical analyses present smart way design such towards their future integration The results are obtained by means Comsol...
A thorough understanding of biological species and emerging nanomaterials requires, among others, their in-depth characterization with optical techniques capable nano-resolution. Nanoscopy based on tip-enhanced effects have gained over the past years tremendous interest given potential to probe various properties resolutions depending size a sharp interacting focused light, irrespective illumination wavelength. Although popularity number applications is rising, nanoscopy (TEN) still largely...
In this article, a spatial-dependent evaluation method is presented in order to visualize the changing behavior of several parameters such as temperature and electrical potential semiconductor materials. If well-known experimental standard methods enable solid measurements results, space-dependent simulations good step-by-step follow-up mechanisms. The original combination three complementary (analytical, numerical experimental) here whole package extract Seebeck coefficient Germanium. An...