A5084617545- Acoustic Wave Resonator Technologies
- Mechanical and Optical Resonators
- Advanced MEMS and NEMS Technologies
- Microfluidic and Bio-sensing Technologies
- GaN-based semiconductor devices and materials
- Electrical and Thermal Properties of Materials
- Metamaterials and Metasurfaces Applications
- Carbon Nanotubes in Composites
- Gas Sensing Nanomaterials and Sensors
- Advanced Sensor and Energy Harvesting Materials
- Analytical Chemistry and Sensors
- Organic Light-Emitting Diodes Research
- Energy Harvesting in Wireless Networks
- COVID-19 Pandemic Impacts
- Organic Electronics and Photovoltaics
- Microwave Engineering and Waveguides
- 3D IC and TSV technologies
- Advanced Surface Polishing Techniques
- Luminescence and Fluorescent Materials
Delft University of Technology
2010-2016
Carleton University
2007
Rensselaer Polytechnic Institute
2006
Aluminum Nitride thin films with the desired properties for piezoelectric actuators are grown by pulsed DC sputtering on Si (100) substrates coated different seed layers (Al/1%Si, Mo, Ti).The influence of parameters and crystallinity orientation AlN is investigated.Raman spectroscopy measurements performed results analyzed to identify optimal deposition conditions.The high-c axis obtained Ti as a layer was confirmed X ray diffraction.It appears that 200nm valid alternative Molybdenum or...
Very low-stress and good crystallinity Aluminum Nitride (AlN) thin films deposited on (100) Silicon substrates are optimized for surface acoustic wave (SAW) devices. We developed a simplified process to fabricate AlN SAW devices suitable fast screening of liquid substances as needed health environmental monitoring. By encapsulating the interdigital transducer (IDT) with very SiN layer, sufficiently large sensing area is available between electrodes. This allows direct loading drops device...
Very thin piezoelectric cantilevers based on AlN layers using titanium Ti film electrodes are fabricated and characterized. By optimizing the sputtering parameters, a very low stress (156 MPa) stack with high crystallinity strong (002) orientation of films is obtained. Finally, simple fabrication process, fully CMOS compatible, developed to realize slender (900 nm) microcantilevers. A resonant frequency 19.3 kHz measured for 200 ?m long cantilevers. The deflection cantilever 6 nm/V 189...
This paper presents a fabrication process for high-temperature MEMS microhotplates that uses sputtered molybdenum as conductive material. Molybdenum has high melting point (2693°C bulk) and is simpler to deposit pattern in larger series than platinum. sensitive oxidation above 300°C, so during it protected by PECVD silicon oxide then covered LPCVD SiN. The electrical resistivity linear with the temperature up 700°C at least. microhotplate higher maximum operating platinum which demonstrated...
The structure of AlN layers grown on Ti with and without an interlayer between the Si substrate layer is investigated. grains take over orientation columnar in both cases. Surprisingly, do not completely orientations interlayer, show same grain as sample interlayer. Hence, top independent presence below mainly determined by microstructure.
A method of stress control in microelectromechanical systems (MEMS) devices is presented that consists creating counterbalancing structures to position stressed layers at the neutral plane device, eliminating bending momentum acting on device. Upon metallization, many MEMS elements such as silicon membranes show substantial bow under developed a result difference thermal expansion coefficients metal and silicon. The proposed with remain flat entire test temperature range (25–150°C). gives...
Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender beams with a thin PECVD silicon nitride (SiN) layer. Very good linearity and high deflection, up to 19 nm/V of actuation deflection 200 μm long cantilevers, at quasi-static mode, obtained 500 nm SiN top This value three times larger than our previously reported without the The results make these fabricated in CMOS compatible process, very promising micro/nano actuators.
Aluminum Nitride (AlN) is explored as a thin film material for piezoelectric MEMS applications. A pulse DC reactive sputtering technique used to deposit the AlN films and process parameters are optimized obtain good crystallinity high c-axis orientation films. CMOS compatible developed employed fabricate surface acoustic wave devices based on AlN/Si structure targeting operation in liquid environment shearmode resonators mass sensing We also investigate sputtered Ti electrodes flexible devices.
This paper presents an Aluminum Nitride (AlN) surface acoustic wave (SAW) device for liquid detection, based on remaining molecules and vaporization rate. The sensing mechanism of the SAW uses linear attenuation frequency shift during process liquid. As is meant to operate with liquids, piezoelectric film metal interconnects are protected by a silicon oxide layer. A change in insertion loss measured when drops (0.5-2 μl) demi-water (DW), isopropyl alcohol (IPA) ethanol (ETH) applied device....
We report a novel shear mode resonator excited by lateral field using an AlN/SiN membrane structure, for mass sensing applications. The acoustic wave was clearly observed ring-shaped electrode structure on round made of very low stress (~ 50 MPa) and thin 970 nm) AlN film. A significant frequency shift (around 7 MHz) generated when dropping particles as loading masses the surface devices, measured, demonstrating potential these devices
This paper presents the effect of an arbitrary interruption propagation path in Surface Acoustic Wave (SAW) microdevices on intensity scattered surface waves. Using finite element modeling, simulations have been carried out to validate a new equivalent circuit based conventional Mason and Smith model. In addition, experimental results obtained with 30, 50 100 μm diameter microholes are reported. The comparison theory, simulation experiment proves that it is possible fabricate like deep...