A5000357208- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Additive Manufacturing and 3D Printing Technologies
- Electronic Packaging and Soldering Technologies
- Advanced Chemical Physics Studies
- Semiconductor Lasers and Optical Devices
- 3D IC and TSV technologies
RISE Research Institutes of Sweden
2023-2025
Lund University
1996-1997
Measurements of modulation-doped Ga0.25In0.75As/InP quantum wells show, in the 〈−110〉 direction, a record electron mobility 520 000 cm2/V s at 300 mK. A difference 15% between 〈110〉 direction and is observed. This anisotropy tentatively attributed to an ordering effect. The mobilities room temperature 77 K were 16 100 170 s, respectively. By separating out ionized impurity scattering from other processes well, we conclude that low concentrations limiting mobility, while alloy has strong...
Two different scattering mechanisms determine the momentum relaxation time, τ, and single particle τs, of electrons in a modulation doped Ga0.25In0.75As/InP quantum well. We show that τ is mainly limited by alloy disorder scattering, while τs determined remote ionized impurity rate. This means material system offers unique possibility tuning varying distance between layer two-dimensional electron gas, kept constant. The variation can thus be monitored, for example, observing appearance...
Here, we investigate the effects of O2:N2 (1:1) as ambient gas compared with pure N2 during activation annealing Mg p-type doping in GaN layers grown by MOCVD. The purpose is to understand impact O2 on resulting free hole concentration and mobility using SIMS, XRD, STEM, AFM, Hall effect measurements. Even though presence very effective reducing H level Mg-doped layers, maximum achievable still higher N2. differences are explained an in-diffusion O layer acting n-dopant and, thus, giving...
Wide bandgap (WBG) semiconductor devices based on SiC, GaN and Ga 2 O 3 provide advantages for many strategic initiatives in various industrial sectors, such as data centers, electric vehicles, renewable energy systems like solar wind power inverters. Here we an overview of our ongoing WBG related research/development innovation activities, especially owing to their rapid/huge demanding the emerging green technology market nowadays. In particular, innovative material epi growth, device...
Wide bandgap (WBG) semiconductor devices based on SiC, GaN and Ga 2 O 3 provide advantages for many strategic initiatives in various industrial sectors, such as data centers, electric vehicles, renewable energy systems like solar wind power inverters. Innovations WBG technologies would enable new paths efficiency pushing towards sustainable perspectives. For instance, higher lower dissipation are always desirable digital economy/society electronic applications owing to the saving at end with...
The effects of N 2 and O :N (1:1) as ambient gases during activation annealing Mg p-type doping GaN grown by MOCVD are investigated. purpose is to understand the mechanisms involved especially impact on resulting free hole concentration mobility. addition gas very effective in reducing H level Mg-doped layer, at lower temperatures, but maximum achievable mobility, determined Hall characterization, still higher with pure . difference between or a explained an in-diffusion layer acting...