A5065070580- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- Soil erosion and sediment transport
- Chalcogenide Semiconductor Thin Films
- Neural Networks and Reservoir Computing
- Hydrology and Watershed Management Studies
- Semiconductor materials and devices
- Molecular Junctions and Nanostructures
- Neural dynamics and brain function
- Transition Metal Oxide Nanomaterials
- Quantum Dots Synthesis And Properties
- Hydrology and Sediment Transport Processes
- Electronic and Structural Properties of Oxides
Dongguk University
2022-2024
Since research on artificial intelligence has begun receiving much attention, interest in efficient hardware that can process a complex and large amount of information also increased. The existing von Neumann computing architecture significant limitations terms speed energy efficiency. Volatile memristors are the most promising among several emerging memory semiconductor devices, because they have various features suitable for neuro-inspired applications. Therefore, comprehensive review...
In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog implement artificial synaptic devices. The showed good pulse endurance (104 cycles), a high on/off ratio (>10), long retention (>104 s) at room temperature. conduction mechanism could be explained Schottky emission conduction. Further, the characteristics were performed additional pulse-signal-based experiments for more practical operation. Lastly,...
Nitride film played an essential role as excellent diffusion barrier in the semiconductor field for several decades. In addition, interest next-generation memories induced researchers' attention to nitride a new storage medium. A Pt/AlN/TaN device was investigated resistive random-access memory (RRAM) application this work. Resistive switching properties were examined AlN thin formed by atomic layer deposition (ALD). The unique feature conducted under positive voltage investigated, while...
Abstract Memristors have diverse potential for improving data storage through linear memory control and synaptic operation in AI neuromorphic computing. Prior research on optimizing memristors next‐generation devices has generally indicated that emerging arrays vertical structures can improve density, although special fabrication steps are required to realize improved operation. Until now, many obstructions, such as the sneak path current forming processes from initial device array structure...
In this work, we compare the resistive switching characteristics between Ti/ZrOX/TiN and Ti/ZrOX/HfAlOX/TiN. The bilayer structure of ZrOX-based device enables power consumption reduction owing to a lower forming voltage compliance current. Moreover, on/off ratio Ti/ZrOX/HfAlOX/TiN (>102) is higher than that (>10). We use 1/f noise measurement technique clarify transport mechanism device; consequently, ohmic conduction Schottky emission are confirmed in low- high-resistance...
Both tin monosulfide (SnS) and disulfide (SnS2) are thermodynamically stable layered materials with potential for spin-valleytronic devices photodetectors. Notably, monolayer SnS, owing to its low symmetry, exhibits interesting properties such as ferroelectricity, shift-current, a persistent spin helix state in the limit. However, creating atomic-thickness crystals of SnS is challenging enhanced interlayer interactions caused by lone pair electrons, unlike SnS2. Here, we demonstrate that...