A5044847338- Magnetic properties of thin films
- Quantum and electron transport phenomena
- ZnO doping and properties
- Magnetic and transport properties of perovskites and related materials
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Physics of Superconductivity and Magnetism
- Advanced Data Storage Technologies
- Heusler alloys: electronic and magnetic properties
- Theoretical and Computational Physics
University of Ulsan
2021-2023
Samsung (South Korea)
2016
Abstract Unidirectional Spin Hall magnetoresistance (USMR) is a non-linear phenomenon recently observed in ferromagnet (FM)/nonmagnetic metal (NM) bilayer structures. Two very different mechanisms of USMR have been proposed; one relies on the current-direction-dependence electron-magnon scattering FM layer, and other spin accumulation at FM/NM interface. In this study, we investigate epitaxial Cr/Fe bilayers finding that significantly enhanced when Fe magnetization aligned to particular...
We present a highly scalable 2nd generation 45-nm split-gate embedded flash, which has been scaled of 40% unit-cell-size (almost same size with 28-nm technology node) from the 1st flash without using extra masks, processes and advanced-equipment. By optimizing process triple-gate architecture implementing several design methodologies, high speed operation (10ns random access time, 25us write time less than 2ms erase operation) robust reliability (1M cycle, 20 retention) are achieved. It...
Unidirectional magnetoresistance (UMR) is a family that arises from spin-current generation in ferromagnet (FM)/nonmagnetic heavy metal (HM) bilayers. Because UMR exhibits asymmetric behavior owing to the current or external magnetic field directions, it easy quantify amount of charge-to-spin conversion system and sign spin current. has been explained by two major mechanisms: accumulation at FM/HM interface electron-magnon scattering an FM layer. In this study, we investigated thickness...
Spin orbit torque (SOT) is essential to magnetization modulation in various ferromagnet/non-magnet bilayers. In this study, we demonstrated that SOT can be enhanced a hybrid system composed of perovskite oxide NdNiO3 (NNO) and Ni81Fe19/Pt bilayer. We also find the enhancement might attributed spin absorption at interface between NNO Ni81Fe19 layers. Our findings suggest metal-oxide structures promising systems for development efficient spin–orbitronic devices.
스핀 홀 효과에 기반한 스핀-오빗트로닉스 장치는 유망한 차세대 메모리 후보이다. 이를 위해서는 강자성체와 중금속 층으로 구성된 이중층 구조에서는 장치의 자화를 제어하기 위해 상당한 크기의 궤도 토크를 가져야만 한다. 본 연구에서는 오비탈 각도와 우수한 전도성을 가진 Cr 기반 이종 구조에서 자기저항(orbital Hall magnetoresistance, OMR)을 측정함으로써 수송 특성을 살펴보았다. Cr/CoFeB OMR의 층 두께 의존성을 관측하였다. Pt 층을 삽입한 Cr/Pt/CoFeB 구조와의 비교 실험을 통해 스핀-궤도 결합에 의한 오비탈-스핀 전환현상을 이해해보았다. 연구는 전류에 대한 전도 현상을 이해하는데 도움이 될 것이다. Spin-orbitronics devices based on spin effect is a strong candidate for new generation memory devices. To realize this device the...