A5003975047- Metal and Thin Film Mechanics
- Copper Interconnects and Reliability
- Diamond and Carbon-based Materials Research
- GaN-based semiconductor devices and materials
- Plasma Diagnostics and Applications
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- nanoparticles nucleation surface interactions
- Metallurgical and Alloy Processes
- High-Temperature Coating Behaviors
- Advanced materials and composites
- Coagulation and Flocculation Studies
- Vacuum and Plasma Arcs
- Silicon and Solar Cell Technologies
- Acoustic Wave Resonator Technologies
- Particle Dynamics in Fluid Flows
- Fusion materials and technologies
- Advanced Materials Characterization Techniques
- High voltage insulation and dielectric phenomena
- Dust and Plasma Wave Phenomena
- Spectroscopy and Quantum Chemical Studies
- Tribology and Wear Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Gas Dynamics and Kinetic Theory
- Plasma Applications and Diagnostics
Eaton (Taiwan)
2023
Tescan (Czechia)
2023
HVM Plasma (Czechia)
2010-2019
Czech Academy of Sciences, Institute of Physics
1991-2001
Czech Academy of Sciences
1994-2001
Transnational University Limburg
1997
Hasselt University
1996
Institute of Physics of the Slovak Academy of Sciences
1988-1991
Cross-sectional transmission electron microscopy (XTEM) has been used to investigate the effects of variations in low-energy ion irradiation flux during growth reactively sputter-deposited TiN. The films were deposited on steel substrates with a negative bias 100 V at 350 °C mixed Ar–N2 discharges pressure 5 Pa (37 mTorr). ion-to-Ti arrival rate ratio Jion /JTi substrate was varied between 0.3 and 7.1 through use variable external magnetic field. Films grown ≲2 had columnar morphology highly...
The hysteresis effect occurring in reactive sputtering is shown by pumping speed analysis to arise from loss gettering throughput, consequent on reduction target yield, without rise throughput. Change this balance due higher can result stable conditions.
The behavior of neutral component the plasma during high power impulse magnetron sputtering was studied. Movement particles including sputtered metal (Ti) and Ar gas an (200 µs, 1 kA, kV) has been simulated using direct simulation Monte Carlo method. When discharge current reaches kA range, very strong rarefaction in main region occurs volume density exceeds several times. This may contribute to ratio ions observed experiments. Rapid movement form a shock wave toward substrate results...
This paper presents a critical review of the present status and trends in sputtering thin films. A special attention is devoted to magnetron sputtering, especially unbalanced magnetrons (UM) new devices utilizing magnetic and/or electric plasma confinement. The last category opens possibilities production high quality Sputtering systems using UM operated double-site-sustained discharge closed multipolar field are described. also effects ion bombardment on properties deposited In case hard...
The reactive sputtering of hard coatings as TiN in large distances and/or on substrates is difficult to perform with the conventional magnetron. A strong magnetic confinement plasma between magnetron target and enhances gas ionization raises ion current Is extracted substrates. new system a multipolar (MMPC) described. It consists planar unbalanced (UM), diameter 120 mm equipped two coils, coupled closed field formed by set permanent magnets located internal surfaces deposition chamber....
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation L. R. Shaginyan, M. Mišina, S. Kadlec, Jastrabı́k, A. Macková, V. Peřina; Mechanism of the film composition formation during magnetron sputtering WTi. Journal Vacuum Science Technology A 1 September 2001; 19 (5): 2554–2566. https://doi.org/10.1116/1.1392401 Download citation file: Ris (Zotero) Reference Manager...
Titanium and aluminum targets have been reactively sputtered in Ar +O2 or +N2 gas mixtures order to systematically investigate the effect of reduced hysteresis reactive high power impulse magnetron sputtering (HiPIMS) as compared other techniques utilizing low discharge target density (e.g., direct current pulsed mid-frequency sputtering) operated at same average power. We found that negative slope flow rate gettered by material a function partial pressure is clearly lower case HiPIMS. This...
A tendency to disappearing hysteresis in reactive High Power Impulse Magnetron Sputtering (HiPIMS) has been reported previously without full physical explanation. An analytical model of pulsed sputtering including HiPIMS is presented. The combines a Berg-type with the global Christie-Vlček. Both time and area averaging used describe macroscopic steady state, especially gas balance reactor. most important effect presented covering reacted parts target by returning ionized metal, effectively...
Presented is a generalized microphysical model for reactive sputtering, taking into account inhomogeneities of both the target erosion and deposition films on condensing surfaces substrates chamber walls. The integral quantities, as total metal ejection rate or gas consumption, can be treated if were homogeneous but over properly determined effective areas. Conversely, local coverage by compound film composition, are strongly influenced inhomogeneities. Both wall area Aw substrate As...