About
Contact & Profiles
A5103326294
Research Areas
- Diamond and Carbon-based Materials Research
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
STMicroelectronics (Italy)
2024
Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, high-power and high-temperature applications. However, the production of advanced SiC power devices still remains limited due to some shortcomings dielectric properties passivation layer. Thanks their high operating temperature strength, spin coated polyimide (PI) layers are considered ideal candidates insulation. In this view, robust methodology physico-chemical characterization such PI required. use time...
10.1016/j.apsusc.2024.160719
article
EN
cc-by-nc-nd
Applied Surface Science
2024-07-11
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