Barry Clarke

ORCID: 0009-0008-1821-7263
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About
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Research Areas
  • Copper Interconnects and Reliability
  • Metallic Glasses and Amorphous Alloys
  • Magnetic properties of thin films
  • Semiconductor materials and devices
  • Magnetic Properties and Applications
  • Ferroelectric and Piezoelectric Materials
  • Acoustic Wave Resonator Technologies

Tokyo Electron (Ireland)
2023

This article presents optimized CoZrTaB-based laminated thin films with a wet etch-able oxide dielectric material. Wet etching capability was studied on the stack material and narrow clean undercut achieved. Good uniaxial anisotropy low coercivity (< 1 Oe) achieved via in situ magnetic alignment during magnetron sputtering. The relative permeability of 432 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$...

10.1109/tmag.2023.3287135 article EN IEEE Transactions on Magnetics 2023-06-16

Sputtered FeCoNx thin films with various nitrogen fractions are investigated in the quest of low lossy, soft magnetic (SMFs) for high-frequency inductor core. 100 nm thick were deposited N2 + Ar environment (5 m torr) increasing volume percent, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$x$ </tex-math></inline-formula> % = N2/(Ar N2), up to 30%. While FeCo film is isotropic, incorporation exhibits a...

10.1109/tmag.2023.3287682 article EN IEEE Transactions on Magnetics 2023-06-26

Here we report, highly resistive FeCo thin films with enhanced soft magnetic properties (low coercivity and anisotropy) by incorporating nitrogen (N) in the amorphous system. N-doped (FeCoN <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> , x= 15, 17.5 19%) are deposited N xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> +Ar environment flow rate up to 19%. Systematic microstructural studies reveal optimum level of (17.5%) obtain...

10.1109/intermagshortpapers58606.2023.10228376 article EN 2023-05-01

This paper present an optimized CoZrTaB-based laminated thin films with a novel wet etch-able oxide dielectric material. Wet etching capability was studied on the stack material exhibiting narrow and clean undercut. Good uniaxial anisotropy low coercivity achieved via in-situ magnetic alignment during magnetron sputtering. Permeability of 432 Q-factor 23.4 at 100 MHz were observed in high frequency permeameter measurement. Finally thermal annealing carried out various temperatures. Uniaxial...

10.1109/intermagshortpapers58606.2023.10228354 article EN 2023-05-01
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