A5024495419- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Ga2O3 and related materials
- Thermal Radiation and Cooling Technologies
- Advancements in Battery Materials
- Advanced Battery Materials and Technologies
- Transition Metal Oxide Nanomaterials
- Advancements in Solid Oxide Fuel Cells
- Metamaterials and Metasurfaces Applications
- Semiconductor materials and devices
- Catalytic Processes in Materials Science
- Advanced Battery Technologies Research
- Microwave Dielectric Ceramics Synthesis
- Dielectric properties of ceramics
- Aerogels and thermal insulation
- Spacecraft Design and Technology
- Land Use and Ecosystem Services
- Perovskite Materials and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Copper-based nanomaterials and applications
- Biocrusts and Microbial Ecology
- Semiconductor Quantum Structures and Devices
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Remote Sensing and Land Use
Harbin Institute of Technology
2025
Guizhou Institute of Technology
2025
Northwest Institute of Eco-Environment and Resources
2024
Chinese Academy of Sciences
2005-2024
Fujian Normal University
2023
Institute of Solid State Physics
2005-2009
Hefei Institutes of Physical Science
2005-2006
The optical properties of δ-Bi2O3 thin films were investigated using spectroscopic ellipsometry and absorption spectrum. grown on Si quartz substrates under different oxygen flow ratios (OFR) by radio frequency reactive magnetron sputtering. Tauc-Lorentz dispersion method was adopted to model the functions films. bandgap obtained three methods. It found that refractive index extinction coefficient decrease, has a slight blue shift with increasing OFR. Factors influencing constants are discussed.
The influence of annealing on the morphological, structural, and optical properties ZnO:Tb thin films Si substrate grown by magnetron cosputtering is investigated. It has been found that with structures tetrapod screwlike nanorod are formed after at temperature 950°C. X-ray photoelectron spectroscopy, energy dispersive Raman analyses prove tetrapod-aiguille zinc oxide (T-A-ZnO) nanorods composed Zn, Tb, O elements. photoluminescence spectra T-A-ZnO structure featured two ultraviolet emission...
The optical properties of nitrogen-doped SnO2 films with different N2∕(N2+O2) gas ratios grown by reactive sputtering were studied spectroscopy ellipsometry. dielectric functions the simulated Tauc-Lorentz model. It was found that refractive index and extinction coefficient increase band gap has a redshift N2 ratios. general influences electronegativity bond ionicity on gap, in spectral region below fundamental absorption edge SnO2, other doped semiconductors are demonstrated.
Photoluminescence (PL) properties of ZnO thin films on Si substrate with and without an indium tin oxide (ITO) buffer layer, prepared under different oxygen partial pressures in the sputtering gas, were studied. It was found that PL characteristics depend pressure substrate, peak ultraviolet region has a strong red-shift increasing excitation intensity glass substrates ITO increases measuring cycle. Enhanced luminescence efficiency layer measured at cycles can be obtained by thermal annealing.
Nanocrystalline δ-Bi2O3 thin films have been deposited onto Si (100) and quartz substrates by reactive sputtering. The structural characteristics thermal stability of the investigated x-ray diffraction Raman spectra. It was found that could exist stably below 200 °C undergo a phase transition sequence δ → β α with increasing annealing temperature beyond °C. These transitions were further confirmed optical constant band gap studies.
The photoluminescence properties of nitrogen-incorporated SnO2 thin films on Si (100) substrates deposited by reactive magnetron sputtering have been studied. A strong band centered at 3.696eV with full width half maximum 0.2eV has observed room temperature. peak position the emission shifts to higher energy increasing excitation intensity or decreasing is considered due localized exciton recombination, and localization band-tail states are believed originate from potential fluctuation...
Abstract As advanced detection technologies advance toward intelligent capabilities, the camouflage has become increasingly prominent. In recent years, research focused on integrating infrared directional thermal emission and selective full‐angle in long‐wave spectrum with visible light through structural innovations, including multilayer photonic crystals, phase‐change materials, equidistantly excited gratings, 2D materials. To date, integration of remains unexplored published literature....
The microstructure and optical properties of MgO–TiO2 composite thin films prepared by radio frequency magnetron sputtering were studied. have an amorphous structure the growth rate film increases with increasing Mg content. refractive index almost linearly decreases content in at wavelength larger than 300nm can be adjusted wide range between TiO2 that MgO. extinction coefficient is nearly zero visible light region. band gap determined from absorption spectra content, has a good agreement...
The orientation growth and angle-dependent photoluminescence (PL) of nitrogen-doped SnO2 films grown on Si substrate by reactive magnetron sputtering have been studied. It was found that the depends strongly their thickness, a highly [1 1 0]-oriented film achieved with seed layer. An PL observed, peak position shifts towards longer wavelength side width decreases as observation angle decreases. This attributed to Fabry–Perot optical interference effect.
The rhizosphere microbial community helps govern biogeochemical cycling and facilitates complex plant-soil feedback. Understanding the evolutionary dynamics of structure functional genes during vegetation succession is crucial for quantifying understanding ecosystem processes functions in restored sandy deserts. In this study, 11–66-year-old dominant shrubs a desert revegetation area was examined using shotgun metagenomic sequencing. interactions between structure, gene abundances, soil...
We study the optical properties of amorphous GaAs1−xNx films grown by radio frequency magnetron sputtering method with different N2 partial pressures. The surface morphology, absorption, Raman spectra, and constants pressures are reported. appearance peak at 245cm−1 “GaAslike” a shoulder about 750cm−1 related to GaN indicates formation clusters in GaAs matrix. roughness decreases band gap moves short wavelength increasing pressure. refractive index extinction coefficient decrease pressure,...
Abstract Single‐phase β‐ and α‐FeSi 2 thin films can be grown on Si(100) with without a Fe buffer layer by adopting facing target radio‐frequency magnetron sputtering method. The role of the formation film was discussed. composition β‐FeSi tuned from enrichment to Si altering input power applied or/and target, has high (202)/(220) orientation. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)