A5086738013- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Ferroelectric and Negative Capacitance Devices
- 2D Materials and Applications
- Conducting polymers and applications
- Transition Metal Oxide Nanomaterials
- Photochromic and Fluorescence Chemistry
- GaN-based semiconductor devices and materials
Nanjing University of Posts and Telecommunications
2020-2024
Abstract Using a convenient and low-cost plasma-enhanced chemical vapor deposition technique, uniform Ga 2 O 3 thin films were hetero-grown on c -plane sapphire substrates at different temperatures, with root mean square roughness as low 2.71 nm growth rate of up to 1121.30 h −1 ; then the solar-blind UV photodetection performances discussed in detail. Metal-semiconductor-metal photodetectors (PDs) based five prepared temperatures exhibit ultra-low dark currents ( I ) ranging among 22–168...
In this work, a deep-UV photodetector based on Sn-doped Ga2O3 (Sn:Ga2O3) thin film grown by mist chemical vapor deposition (mist-CVD) technology an α-Al2O3 substrate is introduced. This feasible and cheap mist-CVD method contributed to the preparation of Sn:Ga2O3 film. It was found that device exhibits dark current as low 10 pA photocurrent 2.96 μA at −6 V, with photo-to-dark ratio × 105, external quantum efficiency 245.79%, photoresponsivity 0.72 A/W. The higher performance compared without...
Abstract To realize brain‐inspired devices and systems, memristor is one of the significant alternatives in breaking through infrastructure restrictions present logic memory devices. Organic materials have become popular to fabricate memristive due their unique properties low cost, mechanical flexibility, compatibility with complementary metal‐oxide‐semiconductor technology. Metallopolymer a new kind promising organic functioning as resistive‐switching layers donor–acceptor type structure,...
Abstract In this work, a PEDOT:PSS/Sn: α -Ga 2 O 3 hybrid heterojunction diode (HJD) photodetector was fabricated by spin-coating highly conductive PEDOT:PSS aqueous solution on the mist chemical vapor deposition (Mist-CVD) grown Sn: film. This approach provides facile and low-cost p-PEDOT:PSS/n-Sn: method that facilitates self-powering performance through p−n junction formation. A typical type-Ⅰ is formed at interface of film PEDOT:PSS, contributes to significant photovoltaic effect with an...
Deep-UV photodetectors (DUV PDs) have displayed huge potentials in both military and civilian applications due to the low background noise interference. In this work, binary SnO2-Ga2O3 compound nanowires array with excellent photo-response properties had been successfully fabricated by using low-pressure chemical vapor deposition (LP-CVD) Ga2O3, SnO2, carbon powders as reaction sources. The diameter of is approximately 135 nm for oxide SnO2-Ga2O3. deep-UV photodetector achieved large...
Abstract Brain-inspired neuromorphic computing systems have long attracted significant interests to replace the conventional Von-Neumann because development of big data analysis and artificial intelligence has put forward higher requirements for speed energy consumptions. Memristive devices are known as one most candidates implement brain-inspired due their special properties emulate biological synapses human brains. Ferroelectric material is a breakthrough resistive-switching layer...
In the post-Moore era, neuromorphic computing has been mainly focused on breaking von Neumann bottlenecks. Memristors have proposed as a key part of architectures, and can be used to emulate synaptic plasticities human brain. Ferroelectric memristors represent breakthrough for memristive devices account their reliable nonvolatile storage, low write/read latency tunable conductive states. However, among reported ferroelectric memristors, mechanisms resistive switching are still under debate....
In this study, the performance of Schottky barrier diodes (SBD) based on β-Ga2O3 with floating metal rings (FMR) was investigated using numerical simulations Technology Computer-Aided Design (TCAD) software. The simulation parameters β-Ga2O3, including those in lowering, impact ionization, and image-force-lowering models, were extracted from experimental results. Similar forward conduction characteristics to SBDs without FMRs exhibited by device, its breakdown influenced structural such as...