A5009972403- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Silicon Carbide Semiconductor Technologies
- solar cell performance optimization
- Electromagnetic Compatibility and Noise Suppression
- Nanowire Synthesis and Applications
- Advanced Surface Polishing Techniques
- Copper Interconnects and Reliability
- Photovoltaic System Optimization Techniques
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Speech and dialogue systems
- Advancements in PLL and VCO Technologies
- Perovskite Materials and Applications
- 2D Materials and Applications
- Radio Frequency Integrated Circuit Design
- Advanced Memory and Neural Computing
- Silicon Nanostructures and Photoluminescence
Energy Foundation
2024
Nanjing University
2004
Abstract With the improvement of surface passivation, bulk recombination is becoming an indispensable and decisive factor to assess theoretical limiting efficiency ( ) crystalline silicon (c‐Si) solar cells. In simultaneous consideration recombination, a modified model evaluation developed. Surface directly depicted with contact selectivity while revised on aspects ideality wafer thickness. The double‐side heterojunction (SHJ) tunneling‐oxide passivating (TOPCon) cells are numerically...
Crystalline-silicon heterojunction back contact solar cells represent the forefront of photovoltaic technology, but encounter significant challenges in managing charge carrier recombination and transport to achieve high efficiency. In this study, we produced highly efficient with a certified efficiency 27.09% using laser patterning technique. Our findings indicate that losses primarily arise from hole-selective region polarity boundaries. We propose solutions these issues establish clear...
GPT-4o, an omni-modal model that enables vocal conversations with diverse emotions and tones, marks a milestone for foundation models. However, empowering Large Language Models to perceive generate images, texts, speeches end-to-end publicly available data remains challenging in the open-source community. Existing vision-language models rely on external tools speech processing, while speech-language still suffer from limited or even without vision-understanding abilities. To address this...
Single-crystal 3C-SiC films has been deposited on Si(111) substrates in a hot-wall chemical vapor deposition system. The temperature range for growing the SiC is from 1030/spl deg/C to 1130/spl deg/C. reaction precursors are SiH/sub 4/ and C/sub 2/H/sub 4/, while H/sub 2/ carrier gas. effect of partial pressure ethene P/sub C2H4/ film quality investigated by X-ray diffractometry Raman scattering. Within this work, higher could help improve films. thickness refractive index was measured with...
Using chemical vapor deposition method, 4H-SiC films were grown on AlN/Si(100) complex substrates at the relatively low temperature (< 1100/spl deg/C). The results show that there are Al and N present in SiC film due to thermal diffusion of from substrate. Two photoluminescence peaks, being located 3.01 eV 3.17 respectively, have been observed room temperature. lower energetic peak is related acceptor higher shallow donor. ionization energy level donor then obtained be 0.21 0.06 eV,...