A5024610456- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Geology and Paleoclimatology Research
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Radiation Effects in Electronics
- Human Motion and Animation
- Human Pose and Action Recognition
- Ion-surface interactions and analysis
- Diamond and Carbon-based Materials Research
- Electrostatic Discharge in Electronics
- earthquake and tectonic studies
- Landslides and related hazards
- Video Analysis and Summarization
- Earthquake and Tsunami Effects
- Coastal and Marine Dynamics
- Geological and Geochemical Analysis
- 3D Shape Modeling and Analysis
- Silicon and Solar Cell Technologies
- Innovative Energy Harvesting Technologies
- Advanced Sensor and Energy Harvesting Materials
- Geological formations and processes
- Computer Graphics and Visualization Techniques
- Earthquake and Disaster Impact Studies
- Thin-Film Transistor Technologies
National Institutes for Quantum Science and Technology
2008-2024
Tohoku University
2024
National Institute of Technology, Kagawa College
2017-2024
Kagawa Prefectural College of Health Sciences
2024
Kagawa University
2024
Kyushu University
2023
Kobe University
2021-2022
Nippon Koei (Japan)
2022
Gifu University
2013-2022
Waseda University
2011-2019
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, computation and metrology. Mature device fabrication protocols the recent observations of single defect systems with functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate bright diodes. The electrically emitters display fully polarized output, superior photon statistics (with a count rate >300 kHz) stability both continuous pulsed modes, all at...
Spin defects in silicon carbide are promising candidates for quantum sensing applications as they exhibit long coherence times even at room temperature. However, spin readout methods that rely on fluorescence detection can be challenging due to poor photon collection efficiency. Here, we demonstrate coherent control and all-electrical of a small ensemble spins SiC junction diode using pulsed electrically detected magnetic resonance. A lock-in scheme based three stage modulation cycle is...
The formation and evolution of defects in 4H-SiC Schottky barrier diode high-energy particle detectors have been investigated correlated with the detectors' properties. Low temperature annealing at 300 °C is found to significantly recover charge collection efficiency as degraded by 1 MeV electron irradiation. At higher temperatures, an anneal-induced degradation detector's performance observed. Current-voltage, capacitance-voltage, deep level transient spectroscopy (DLTS) measurements are...
Abstract Since the 11 March 2011 Tohoku earthquake, mechanisms of large earthquakes along Japan Trench have been intensely investigated. However, characteristics tsunami earthquakes, which trigger unusually tsunami, remain unknown. The earthquake 4 November 1677 was a striking southern part Trench. Its source mechanism remains unclear. This study elucidates fault slip and moment magnitude based on integrated analyses historical documents, deposits, numerical simulation. Geological survey...
Several applications of external microbeam techniques demand a very accurate and controlled dose delivery. To satisfy these requirements when post-sample ion detection is not feasible, we constructed transmission single-ion detector based on an ultra-thin diamond membrane. The negligible intrinsic noise provides excellent signal-to-noise ratio enables hit-detection efficiency close to 100%, even for energetic protons, while the small thickness membrane limits beam spreading. Moreover,...
Heavy-ion induced anomalous charge collection was observed in 4H-SiC Schottky Barrier Diodes (SBDs). It is suggested that the range of incident ions with respect to thickness epi-layer, ion energy, and electric-field intensity SBD key understanding this observation SEB mechanism.
To clarify the supply/deposition pattern of terrigenous clastics Cretaceous Japan, U–Pb and Pb–Pb ages detrital zircons are analyzed by laser-ablation induced coupled plasma mass spectroscopy (LA-ICPMS) Lower sandstones in Chichibu belt, SW Japan. Target rocks include fore-arc Sanchu graben Choshi area southern Kanto district; e.g. Hauterivian Shiroi Formation, Barremian Ishido Fm, Aptian–Albian Sanyama Fm graben, Ashikajima Early Aptian Inubozaki Nagasakihana area. All these dominated...
Spin defects in solid-state sensors are a highly promising platform for quantum sensing, field with far-reaching applications variety of industries. Here, we investigate the magnetic sensitivity spin defect ensemble detected electrically silicon carbide pn-junction diode utilizing hyperfine-induced spin-mixing effect observed vicinity zero field. To enhance baseline sensitivity, employ above bandgap optical excitation to generate additional electron-hole pairs as well balanced detection...
The radiation damage of 4H-SiC Metal Semiconductor Field Effect Transistors (MESFETs) due to gamma rays was studied. threshold voltage and Schottky property gate contact varied only slightly after absorbed dose 10.4 MGy(SiC). In addition, the transient response charge collection studied by using ion beam induced current (TIBIC) system. It found that collected several orders magnitudes higher than in SiC direct ionization. most likely explanation enhanced bipolar channel modulation effects.
Due to the recent advancement of computer graphics hardware and software algorithms, deformable characters have become more popular in real-time applications such as games. While there are mature techniques generate primary deformation from skeletal movement, simulating realistic stable secondary jiggling fats remains challenging. On one hand, traditional volumetric approaches finite element method require higher computational cost infeasible for limited game consoles. other while shape...
Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, 0.44 eV. Further, associated these signals similar electronic structure, each possessing energy levels negative-U ordering upper half gap....
In our comprehensive analysis of pancreatic cancer pathology, we found that the C4orf47 molecule was upregulated in hypoxic environments. is reported to be a centrosome-associated protein, but its biological significance completely unknown; therefore, assessed role cancer. We direct target HIF-1α and conditions, which it suppressed cell cycle inhibits proliferation through up-regulation repressors Fbxw-7, P27, p57; down-regulation promoters c-myc, cyclinD1, cyclinC. Furthermore, induced...
Osgood-Schlatter disease (OSD) is a type of osteochondrosis and traction apophysitis that results from repeated contractions the quadriceps femoris muscle on tibial tuberosity. Its prevention, early diagnosis, treatment are crucial because it causes chronic knee pain surgical approaches required if left untreated. Three-dimensional motion analysis useful approach for elucidating pathological factors OSD; however, requires advanced cameras, sophisticated facilities, expensive software....
Charge collection efficiency (CCE) of 6H-SiC diodes was evaluated before and after gamma irradiation using a Co-60 source. After 96 Mrad(SiC), CCE at bias 150 V decreased from 95% to 70%. The degradation diffusion length minority carriers the change in applied dependence due irradiation. We also discuss whether non-ionizing energy loss (NIEL) analysis can be evaluate as well carrier removal rate.
Charge collection efficiency (CCE) generated in a 6H-SiC p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> n diode by impact of heavy ions was evaluated the transient ion beam induced current (TIBIC) technique. Numerical analysis using technology computer aided design (TCAD) concludes that Auger recombination process reduces CCE. Comparing experimentally measured CCEs with calculated ones revealed ambipolar coefficient about 3 times 10...
Charge collection of a 6H-SiC p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> n diode has been studied. The collected charges the are measured using single alpha particle strike at various reverse bias voltages, then analyzed both low-injection charge model and DESSIS device simulator. It is found that total lower voltages cannot be well understood based on model. In distinct contrast, simulator successfully predicts all including...