We report epitaxial growth of TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The were characterized x-ray diffraction, Rutherford backscattering, four-point-probe ac resistivity, high resolution transmission electron microscopy and scanning techniques relationship was found to be 〈100〉 ∥ Si. showed 10%–20% channeling yield. In the plane, four unit cells match with three less than 4.0% misfit. This domain matching epitaxy provides a new...

High current YBa2Cu3O7−δ (YBCO) thick films on flexible nickel substrates with textured buffer layers were fabricated. Highly yttria-stabilized-zirconia deposited by using ion beam assisted deposition (IBAD). Pulsed laser YBCO not only c-axis oriented respect to the film surface but also strongly in-plane textured. The mosaic spread of was ∼10°. A critical density 8×105 A/cm2 obtained at 75 K and zero field for thin films. It demonstrated that a high excellent magnetic dependence liquid...

Using pulsed laser deposition, YBa2Cu3O7−δ (YBCO) films ranging in thickness from 0.065 to 6.4 μm have been deposited on yttria-stabilized zirconia substrates with an intermediate layer of CeO2. The thinnest critical current densities over 5 MA/cm2 at 75 K zero applied field; as film is increased, Jc decreases asymptotically 1 MA/cm2. X-ray analysis a 2.2-μm-thick shows that the YBCO predominantly c-axis oriented and textured in-plane, while Rutherford backscattering spectrometry minimum...

Epitaxial Ba0.5Sr0.5TiO3 (BST) thin films were deposited on LaAlO3 substrates with the conductive metallic oxide SrRuO3 (SRO) as a bottom electrode by pulsed laser deposition. The BST and SRO (𝒽00) (00ℓ) oriented normal to substrate surface, respectively. epitaxial nature of both layers was determined measurement in-plane orientation respect major axes substrate. Ion beam channeling minimum yield around 10% from Rutherford backscattering spectrometry demonstrated be high crystallinity. A...

Measurements of hydrogen loss and luminescence as a function annealing temperature in porous silicon suggest that is attributable to electron-hole recombination SiOx surface layers with an intensity dependent upon the content. The composed three Gaussian bands similar those found amorphous SiO2. X-ray photoelectron spectroscopy scanning electron microscopy show has on surface, which comprised many particles about 10 nm size. Collectively, data strongly support previously proposed quantum...

In situ pulsed excimer laser processing of high Tc YBa2Cu3O7−δ films on Si (100) substrates with yttria-stabilized zirconia (YSZ) buffer layers, has been carried out for the first time using a multitarget deposition system. Both YSZ and layers were deposited sequentially KrF (λ=248 nm) at substrate temperature 650 °C. The morphology structure determined x-ray diffraction transmission electron microscopy techniques. superconducting transition (onset) 90 K Tc0 (zero resistance) 82 achieved...

We have investigated the formation of textured and epitaxial metallic films on (100) MgO single crystals substrates (lattice constant a=4.21 Å) as a function deposition temperature during pulsed laser ablation. Platinum (a=3.92 with lattice misfit 7.4% were found to grow epitaxially in range 500–700 °C. Three-dimensional x-ray diffraction results (theta, phi, chi scans) show 〈100〉 epitaxy alignment all three cube axes. Rutherford backscattering channeling measurements film deposited at 700...

I n situ formation of YBa2 Cu3 O7 superconducting thin films by the pulsed laser evaporation technique is critically dependent on processing conditions (substrate temperature, oxygen partial pressure, subsequent annealing, etc.) and deposition setup, including nozzle geometry required for incorporation oxygen. We have studied recovery properties as a function location jet relative to fixed substrate-target setup at substrate temperature 550 °C an pressure 200 mTorr. Several experiments were...

Highly conductive ruthenium oxide (RuO2) has been epitaxially grown on LaAlO3 substrates by pulsed laser deposition. The RuO2 film is (h00) oriented normal to the substrate surface. heteroepitaxial growth of demonstrated strong in-plane orientation thin films with respect major axes substrate. High crystallinity also determined from Rutherford backscattering channeling measurements. Electrical measurements demonstrate a quite low room-temperature resistivity 35±2 μΩ cm at deposition...

We have studied the microstructural and superconducting properties of YBa2Cu3O7 films fabricated by pulsed laser evaporation YBa2Cu3O7-Ag targets, containing approximately 30% weight silver. The produced excimer evaporation/ablation targets were found to possess better than prepared under same conditions from bulk targets. deposited on yttria stabilized zirconia (YSZ) substrates at 650 °C showed helium ion channeling yields 9%–12%, while had in range 18%–25%. critical current density...

We have investigated the formation of MgO and yttria-stabilized ZrO2(YSZ) thin films on Si(100) substrates using laser (wavelength 248 nm pulse duration 40 ns, repetition rate 5 Hz) physical vapor deposition method. The were deposited from solid targets polycrystalline YSZ in appropriate ambient with substrate temperature optimized at 650 °C. absorption coefficient target was enhanced by Ni doping. characterized scanning transmission electron microscopy (plan cross section), x-ray...

Three-dimensional epitaxial Cu/TiN/Si(100) heterostructures have been grown by pulsed laser deposition using a single chamber, in situ processing method. The TiN layers on Si(100) were at 600 °C and Cu TiN/Si(100) the temperature range 200–600 optimized parameters. These structures characterized three-axis x-ray diffraction (Θ, Φ, Ψ scans) technique high-resolution transmission electron microscopy. results clearly indicate cube-on-cube alignment along three axes, i.e.,...

We have fabricated high-quality 〈00l〉 textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si by interposing YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 ns). The YBCO layer provides a seed for PZT growth can also act as an electrode the films, whereas YSZ diffusion barrier well of (001)Si. These heterostructures were characterized x-ray diffraction, high-resolution transmission electron microscopy,...

High current YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) thick films on flexible nickel substrates with textured buffer layers were fabricated. Highly yttria-stabilized-zirconia (YSZ) deposited by using ion beam assisted deposition (IBAD). Pulsed laser YBCO not only c-axis oriented respect to the film surface but also strongly in-plane textured. The mosaic spread of was/spl sim/10/spl deg/. A critical density 8/spl times/10/sup 5/ A/cm/sup 2/ was obtained at 75 K and zero field for thin...

Epitaxial YBa2Cu3O7−δ (YBCO) thin films were deposited on (100) MgO using platinum and SrRuO3 (SRO) buffer layers by pulsed laser deposition. The (001) textured normal to substrate surface with a high degree of in-plane orientation respect the substrate’s major axes. YBCO showed superconducting transition temperature (Tco) at 91 K critical current densities found be 2–3×106 A/cm2 77 zero field. An ion beam minimum channeling yield 16% was obtained for films, indicating crystallinity....

High-temperature superconductor YBa2Cu3O7−δ based superconducting-normal-superconducting (SNS) Josephson junctions were fabricated using a unique device design. The normal material included gradient Pr-doped Y1−xPrxBa2Cu3O7−δ layer which was composed of light doping (x=0.1) next to both electrodes, slightly higher (x=0.3) towards the center, and concentration x=0.5 in middle N layer. This design graded lattice mismatch between layer, thus avoiding accumulation all strain at one interface. It...

Superconducting YBa2Cu3O7−δ(YBCO) thin films have been deposited in situ on GaAs(100) by laser evaporation using yttria-stabilized zirconia (YSZ) as a buffer layer. The YSZ layer was at room temperature initially, followed deposition 650 °C. YBCO layers were subsequently substrate of All the depositions carried out single chamber equipped with multitarget holder KrF excimer laser, λ=248 nm. morphology and structure determined x-ray diffraction, scanning electron microscopy, transmission...

Abstract A processing technique is developed to fabricate single-crystal yttria-stabilized zirconia (YSZ) on amorphous SiO2 (100) Si. The YSZ layer shows high crystallinity with an ion beam channelling minimum of 11 % from Rutherford backscattering. Even though there a thick intervening between the Si and YSZ, aligned crystal tilt rotation variations are 0·64° 1·11° respectively, based X-ray diffraction Ω-rocking curves [100] π scans [202] films. epitaxial nature (from 10 100 nm) further...

Electroforming is one of the lining methods commonly used for depositing copper on accelerator components. In direct current (dc) processes, organic additives are to obtain a smooth surface. However, reduce purity deposit and cannot be applied The periodic reversal (PR) process produces superior levelling structural uniformity in deposits made without additives. objective present work was study effect parameters (without additives) microstructural characteristics mechanical properties...