A5087532263- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Transition Metal Oxide Nanomaterials
- Advanced Memory and Neural Computing
- Nonlinear Optical Materials Studies
- Solid-state spectroscopy and crystallography
- Photonic and Optical Devices
- Liquid Crystal Research Advancements
Tongji University
2022-2024
Beijing University of Technology
2020
The pressing need for data storage in the era of big has driven development new technologies. As a prominent contender next-generation memory, phase-change memory can effectively increase density through multilevel cell operation and be applied to neuromorphic in-memory computing. Herein, structure properties Ta-doped MnTe thin films their inherent correlations are systematically investigated. Amorphous sequentially precipitated cubic MnTe2 hexagonal Te phases with increasing temperature,...
Abstract The scandium (Sc) and aluminum (Al) co-doped antimony-selenium (Sb 45 Se 25 Sc 7 Al 23 ) thin film was fabricated systematically investigated in this study. results reveal that our examined Sb has good thermal stability (the failure temperature for ten years data retention ∼103 °C) the fast phase change speed (5 ns) at same time. Besides, shows no multiple change, which derives from fact formation of new or related phases are able to trigger states film. However, it is found more...
On-chip photonics devices relying on the weak, volatile thermo-optic or electro-optic effects of silicon usually suffer from high insertion loss (IL) and a low refractive index coefficient. In this paper, we designed two novel 1 × 2 phase-change optical switches based signal-mode Si waveguide integrated with Ge2Sb2Te5 (GST) top clad layer, respectively. The three-state switch including amorphous GST (a-GST), face centered cubic crystalline phase (FCC-GST) hexagonal (HCP-GST) operated by...
This paper presents a comprehensive investigation into the thermal stability of superlattice-like (SLL) thin films fabricated by varying stacking order SLL [Ge8Sb92(25nm)/GeTe(25nm)]1 and [GeTe(25nm)/Ge8Sb92(25nm)]1 configuration. Our results show distinct difference in between two configurations. The superior is attributed to diffusion Sb precipitated phase from Ge8Sb92 GeTe. process effectively reduces impact on when positioned as lower layer. In contrast, case [Ge8Sb92(25nm)/GeTe(25nm)]1,...