A5048547115- CCD and CMOS Imaging Sensors
- Particle Detector Development and Performance
- Medical Imaging Techniques and Applications
- Thin-Film Transistor Technologies
- Radiation Detection and Scintillator Technologies
- Radiation Effects in Electronics
- Calibration and Measurement Techniques
- Nuclear Physics and Applications
The Open University
2022-2024
A monolithic CMOS image sensor based on the pinned photodiode (PPD) and optimized for X-ray imaging in 300 eV to 5 keV energy range is described. Featuring 40 μm square pixels thick, high resistivity epitaxial silicon, fully depleted by reverse substrate bias. Backside illumination (BSI) processing has been used achieve QE, a dedicated pixel design developed low lag conversion gain. The sensor, called CIS221-X, manufactured 180 nm process three different 512×128-pixel arrays pitch, as well...
CIS221-X is a prototype complementary metal-oxide-semiconductor (CMOS) image sensor, optimized for soft x-ray astronomy and developed the proposed ESA Transient High Energy Sky Early Universe Surveyor (THESEUS) mission. The sensor features 40 μm pitch square pixels built on 35 thick, high-resistivity epitaxial silicon that fully depleted by reverse substrate bias. Backside illumination processing has been used to achieve high quantum efficiency, an optical light-blocking filter applied...
CIS221-X is a prototype monolithic CMOS image sensor, optimised for soft X-ray astronomy and developed the proposed ESA THESEUS mission. A significant advantage of technology its resistance to radiation damage. To assess this resistance, four backside-illuminated detectors have been irradiated up total ionising dose 113 krad at ESTEC 60Co facility. Using unirradiated readout electronics, performance each sensor has measured before after irradiation. The gain, noise dark current are shown...
CIS221-X is the first in a new generation of monolithic CMOS image sensors optimized for soft x-ray applications. The pixels are built on 35 μm thick, high-resistivity epitaxial silicon and feature Deep Depletion Extension (DDE) implants, facilitating over depletion by reverse substrate bias. When cooled to -40 °C, reports readout noise 3.3 e- RMS 12.4 ± 0.06 e-/pixel/s dark current. 40μm experience near-zero lag. Following per-pixel gain correction, an energy resolution 130 0.4 eV FWHM has...