- Cloud Computing and Resource Management
- Electrical Contact Performance and Analysis
- Ferroelectric and Negative Capacitance Devices
- Electromagnetic Launch and Propulsion Technology
- Electrical Fault Detection and Protection
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Caching and Content Delivery
- Software-Defined Networks and 5G
United Microelectronics (Taiwan)
2005
In current high-speed data center networks, congestion control is crucial for ensuring consistent high performance. Over the past decade, researchers and developers have explored several signals such as ECN, RTT, INT. However, most of existing algorithms suffer from either imprecise detection due to ambiguous or excessive bandwidth loss aggressive rate decrease. This paper proposes a novel mechanism called TOD, which trend-oriented delay-based approach designed lossless networks. TOD...
This paper presents a cutting-edge 65nm gate dielectrics technology featuring EOT at 1.06 nm (CET = 1.79nm), nFET Jg 8.5 A/cm/sup 2/, as well 10/spl mu/m/spl times/10/spl mu/m n/pMOSFET Vt of 0.078/0.148V. A novel room temperature plasma SiON is developed with unique capability to achieve higher top-to-bottom nitrogen concentration ratio than conventional SiON. In addition, peak moved toward top surface. Furthermore, EOT-Jg characteristics are improved by applying this process the post...