The negative resistance induced by space-charge effects in bulk semiconductor devices subjected to avalanche multiplication has been studied clarify the physics of this phenomenon and validity assumptions made other authors. On basis numerical results, an analytical model is proposed, using regional approximation evaluate field along device J-V characteristic. Both results show role played injection electrons from cathode velocity saturation for onset resistance, as well hole region near...

Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but doubtful be directly applied carbide (SiC) devices. To evaluate its feasibility and limitations, this paper conducts comprehensive investigation into accuracy, resolution, stability towards yielding the structure information SiC MOSFET using as temperature sensitive electrical parameter. The whole characterization process involves two main...

The first realization of a power vertical JFET operated in the bipolar mode (BJFET) with normally off behavior is reported. structure combines minority carrier injection from gate region on-state, and lateral pinch-off channel, due to built-in voltage, off-state. realized devices show high blocking voltages, up 900 V, zero bias, have extremely low on-resistance. Fast switching speeds forced turn-off times as 100 ns for 600-V voltages been obtained.

This paper aims to provide a guideline with respect reproducible thermal transient measurement for SiC MOSFETs. Although the based on source-drain voltage is widely applied method characterizing properties of MOSFETs, approach developed silicon-based devices may not be directly applicable devices. Therefore, this investigates MOSFETs using as temperature-sensitive electrical parameter. A comprehensive investigation its linearity, sensitivity, and stability toward yielding structure-property...

The fabrication and characterization of a family power bipolar-mode junction FETs (BMFETs) are reported. Blocking voltages up to 1000 V or currents 18 A (corresponding 800 A/cm/sup 2/) have been obtained. experimental results used get an insight into the physics BMFET operation extract basic design criteria for these structures. performance is compared with that bipolar transistor, showing it be superior.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...

A new semiconductor 3-terminal device has been realised in which a majority-carrier current, flowing N+-N-N+ structure, is controlled by minority-carrier current supplied forward-biased P+-N junction. The properties of this are presented and discussed terms physical model.

A new method for the measurement of effective recombination velocity (ERV) high-low transitions is proposed. The based upon a test structure that easily incorporated in standard process bipolar devices. ERV directly obtained out simple dc measurements without any critical parameter involved. can be measured over wide range injection levels and its two main components, namely one due to high-doped layer retarding region transition, separated from each other.

The effects of temperature on the performance vertical JFET's operated in bipolar mode are investigated both theoretically and experimentally. Results demonstrate that JFET is a good candidate power applications it combines very low saturation voltage, slowly varying with temperature, negative coefficient dc current amplification. effects, gain on-resistance, help physical model device operation; shows agreement experimental results.

The on-state and off-state behavior of a bipolar mode JFET device is analyzed by using detailed 2-D numerical simulation. results show that the has basically two modes operation, namely unipolar operation when gate bias less than 0.4 V voltage allows significant injection minority carrier into channel. analysis clearly shows role played conductivity modulation in changing shape I-V curve from triode-like to transistorlike one, as well influence most structure parameters on electrical...

Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but doubtful be directly applied carbide (SiC) devices. To evaluate its feasibility and limitations, this paper conducts comprehensive investigation into accuracy, resolution, stability towards yielding the structure information SiC MOSFET using as temperature sensitive electrical parameter. The whole characterization process involves two main...

A new 3-terminal switching device, based on the avalanche-injection effect, is proposed. Its working principle confirmed both by theoretical and experimental results. Experimental times of order a nanosecond have been observed.

The transient response of ohmic contacts with different absorbing properties for minority carriers is studied in bulk structures subjected to avalanche injection. A first-order model the dynamics injection developed and compared experimental results, showing a relatively long standard contacts.

The fabrication and the characterization of a family power Bipolar Mode JFET's (BMFET) is reported. In these devices, blocking voltages up to 1000 V or currents 18 A (corresponding 800 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) have been obtained. Results allow get an insight in physics operation BMFET, define their theoretical limits operation, understand reasons for superior performance present device, with respect Transistor.