Organozinc Compounds as Effective Dielectric Modification Layers for Polymer Field‐Effect Transistors

• DOI: 10.1002/adfm.201200316
• Publication Date: 2012-06-13T08:49:06Z
• Authors: Xinjun Xu; Bo Liu; Yingping Zou; Yunlong Guo; Lidong Li; Yunqi Liu
• Keywords: Surface Modification; Organic semiconductor

Abstract The interface between the organic semiconductor and dielectric plays an important role in determining device performance of field‐effect transistors (OFETs). Although self‐assembled monolayers (SAMs) made from organosilanes have been widely used for modification to improve OFETs, they suffer incontinuous lack uniform coverage layer. Here, it is reported that by introduction a solution‐processed organozinc compound as layer silane SAM, improved surface morphology reduced polarity can be achieved. originates reaction diethylzinc cyclohexanone solvent, which leads formation zinc carboxylates. Being annealed at different temperatures, exists various forms solid films. With modification, p‐type polymer FETs show high charge carrier mobility about two‐fold larger than control does not contain compound, both devices with positive threshold voltage those negative one. After either altered approach zero or remain unchanged depending on have.