In Situ Bond Modulation of Graphitic Carbon Nitride to Construct p–n Homojunctions for Enhanced Photocatalytic Hydrogen Production

• DOI: 10.1002/adfm.201602779
• Publication Date: 2016-08-05T11:35:57Z
• Authors: Guigao Liu; Guixia Zhao; Wei Zhou; Yanyu Liu; Hong Pang; Huabin Zhang; Dong Hao; Xianguang Meng; Peng Li; Tetsuya Kako; Jinhua Ye
• Keywords: Homojunction; Carbon nitride; Graphitic carbon nitride

Graphitic carbon nitride (g‐C 3 N 4 ) has recently emerged as an attractive photocatalyst for solar energy conversion. However, the photocatalytic activities of g‐C remain moderate because insufficient solar‐light absorption and fast electron–hole recombination. Here, defect‐modified (DCN) photocatalysts, which are easily prepared under mild conditions show much extended light with band gaps decreased from 2.75 to 2.00 eV, reported. More importantly, cyano terminal CN groups, acting electron acceptors, introduced into DCN sheet edge, endows both n‐ p‐type conductivities, consequently giving rise generation p–n homojunctions. This homojunction structure is demonstrated be highly efficient in charge transfer separation, results a fivefold enhanced H 2 evolution activity. The findings deepen understanding on defect‐related issues ‐based materials. Additionally, ability build structures by defect‐induced self‐functionalization presents promising strategy realize precise engineering related polymer semiconductors more conversion applications.