High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

• DOI: 10.1002/adfm.201604025
• Publication Date: 2016-12-15T16:17:14Z
• Authors: Faisal Ahmed; Young Duck Kim; Min Sup Choi; Xiaochi Liu; Deshun Qu; Zheng Yang; Jiayang Hu; Irving P. Herman; James Hone; Won Jong Yoo
• Keywords: Dielectric strength

This study addresses high electric field transport in multilayer black phosphorus (BP) effect transistors with self‐heating and thermal spreading by dielectric engineering. Interestingly, a BP device on SiO 2 substrate exhibits maximum current density of 3.3 × 10 A m −2 at an 5.58 MV −1 , several times higher than MoS . The breakdown thermometry analysis reveals that is impeded along the BP–dielectric interface, resulting plateau inside channel eventual Joule breakdown. Using size‐dependent electro‐thermal model, interfacial conductance 1–10 MW K extracted for interfaces. By using hexagonal boron nitride (hBN) as material instead thermally resistive (κ ≈ 1.4 W ), threefold increase power relatively endurance obtained together efficient homogenous because hBN has superior structural compatibility BP. authors further confirm results based micro‐Raman spectroscopy atomic force microscopy, observe devices exhibit centrally localized hotspots temperature 600 K, while vicinity electrode 520 K.