Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

• DOI: 10.1002/adfm.201605614
• Publication Date: 2017-02-10T07:35:21Z
• Authors: Jeong Dong Kim; Parsian K. Mohseni; Karthik Balasundaram; Srikanth Ranganathan; Jayavel Pachamuthu; James J. Coleman; Xiuling Li
• Keywords: Aspect ratio (aeronautics); Realization (probability); Isotropic etching; Plasma Etching

Metal‐assisted chemical etching (MacEtch) has shown tremendous success as an anisotropic wet method to produce ultrahigh aspect ratio semiconductor nanowire arrays, where a metal mesh pattern serves the catalyst. However, producing vertical via arrays using MacEtch, which requires of discrete disks catalyst, often been challenging because detouring individual catalyst off path while descending, especially at submicron scales. Here, realization ordered, vertical, and high silicon by MacEtch is reported, with diameters scaled from 900 all way down sub‐100 nm. Systematic variation diameter pitch solution composition allows extraction physical model that, for first time, clearly reveals roles two fundamental kinetic mechanisms in carrier generation mass transport. Ordered record are produced, can directly impact through‐silicon‐via technology, density storage, photonic crystal membrane, other related applications.