Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction

• DOI: 10.1002/adfm.201705970
• Publication Date: 2018-02-16T06:43:05Z
• Authors: Long‐Hui Zeng; Sheng‐Huang Lin; Zhong‐Jun Li; Zhi‐Xiang Zhang; Teng‐Fei Zhang; Chao Xie; Chun‐Hin Mak; Yang Chai; Shu Ping Lau; Lin‐Bao Luo; Yuen Hong Tsang
• Keywords: Specific detectivity

Abstract Group‐10 layered transitional metal dichalcogenides including PtS 2 , PtSe and PtTe are excellent potential candidates for optoelectronic devices due to their unique properties such as high carrier mobility, tunable bandgap, stability, flexibility. Large‐area platinum diselenide (PtSe ) with semiconducting characteristics is far scarcely investigated. Here, the development of a high‐performance photodetector based on vertically aligned ‐GaAs heterojunction which exhibits broadband sensitivity from deep ultraviolet near‐infrared light, peak 650 810 nm, reported. The I light / dark ratio responsivity 3 × 10 4 262 mA W −1 measured at 808 nm under zero bias voltage. response speed τ r /τ f 5.5/6.5 µs, represents best result achieved TMDs device thus far. According first‐principle density functional theory, broad photoresponse ranging visible region associated has interstitial Se atoms within layers. It also revealed that /GaAs does not exhibit performance degradation after six weeks in air. generality above good results suggests an ideal material systems future.