All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing

• DOI: 10.1002/adfm.201804170
• Publication Date: 2018-09-05T13:30:25Z
• Authors: Chuan‐Sen Yang; Da‐Shan Shang; Nan Liu; Elliot J. Fuller; Sapan Agrawal; A. Alec Talin; Yong‐Qing Li; Bao‐Gen Shen; Young Sun
• Keywords: Neuromorphic engineering; Memristor

Abstract Electronic synaptic devices are important building blocks for neuromorphic computational systems that can go beyond the constraints of von Neumann architecture. Although two‐terminal memristive demonstrated to be possible candidates, they suffer from several shortcomings related filament formation mechanism including nonlinear switching, write noise, and high device conductance, all which limit accuracy energy efficiency. Electrochemical three‐terminal transistors, in channel conductance tuned without provide an alternative platform electronics. Here, all‐solid‐state electrochemical transistor made with Li ion–based solid dielectric 2D α‐phase molybdenum oxide (α‐MoO 3 ) nanosheets as is demonstrated. These achieve nonvolatile modulation ultralow regime (<75 nS) by reversible intercalation ions into α‐MoO lattice. Based on this operating mechanism, essential functionalities synapses, such short‐ long‐term plasticity bidirectional near‐linear analog weight update Simulations using handwritten digit data sets demonstrate recognition (94.1%) arrays. results insight application oxides large‐scale, energy‐efficient computing networks.