Graphene‐Enhanced Metal Transfer Printing for Strong van der Waals Contacts between 3D Metals and 2D Semiconductors

• DOI: 10.1002/adfm.202301704
• Publication Date: 2023-04-10T02:50:22Z
• Authors: Dianyu Qi; Peng Li; Haohui Ou; Di Wu; Weiguang Lian; Zhuo Wang; Fangping Ouyang; Yang Chai; Wenjing Zhang
• Keywords: 01 natural sciences; 0104 chemical sciences

Abstract 2D semiconductors have shown great potentials for ultra‐short channel field‐effect transistors (FETs) in next‐generation electronics. However, because of intractable surface states and interface barriers, it is challenging to realize high‐quality contacts with low contact resistances both p‐ n‐ FETs. Here, a graphene‐enhanced van der Waals (vdWs) integration approach demonstrated, which multi‐scale (nanometer centimeter scale) reliable (≈100% yield) metal transfer strategy applicable various metals semiconductors. Scanning transmission electron microscopy imaging shows that 2D/2D/3D semiconductor/graphene/metal interfaces are atomically flat, ultraclean, defect‐free. First principles calculations indicate the sandwiched graphene monolayer can eliminate gap induced by 3D Through this approach, Schottky barrier‐free realized on n‐type FETs, achieving p‐type MoTe 2 , black phosphorus MoS FETs on‐state current densities 404, 1520, 761 µA µm −1 respectively, among highest values reported literature.