Vertical Nonvolatile Schottky‐Barrier‐Field‐Effect Transistor with Self‐Gating Semimetal Contact (Adv. Funct. Mater. 19/2023)

• DOI: 10.1002/adfm.202370118
• Publication Date: 2023-05-09T03:39:05Z
• Authors: Yaoqiang Zhou; Lei Tong; Zefeng Chen; Li Tao; Hao Li; Yue Pang; Jian‐Bin Xu

Schottky Barriers In article number 2213254, Jian-Bin Xu, and co-workers demonstrate that the vertically stacked barrier transistor with semimetal contact enables simultaneous integration of electrode self-gating function to achieve reversible direction photo-generated-charge separation, which envisaged integrate nonvolatility reconfigurable photo response build a promising photo-powered in-memory architecture mimic brain.