Pores in III–V Semiconductors

• DOI: 10.1002/adma.200390043
• Publication Date: 2003-02-14T14:10:05Z
• Authors: H. Föll; S. Langa; J. Carstensen; M. Christophersen; I.M. Tiginyanu
• Keywords: Compound semiconductor; Porous Silicon; Lattice constant; Lattice (music)

Abstract The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries morphologies, to several instances of self‐organization. Self‐ organization issues include the single‐crystalline two‐dimensional hexagonal arrays lattice constants as small 100 nm found synchronized unsynchronized diameter oscillations coupled current voltage oscillations, domain formation. findings are discussed relation observed silicon. Some novel properties porous layers obtained compounds briefly described.