Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

• DOI: 10.1002/adma.200802611
• Publication Date: 2008-12-02T15:52:28Z
• Authors: Morito Akiyama; Toshihiro Kamohara; Kazuhiko Kano; Akihiko Teshigahara; Yukihiro Takeuchi; Nobuaki Kawahara
• Keywords: Scandium

A high-temperature piezoelectric material exhibits a good balance between high maximum use temperature and large piezoelectricity. This is achieved by the combination of discovery phase transition in scandium aluminum nitride (ScxAl1 − xN) alloy thin films, dual cosputtering, which leads to nonequilibrium films.