Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors

• DOI: 10.1002/adma.200902450
• Publication Date: 2009-12-28T15:29:55Z
• Authors: Sunho Jeong; Young‐Geun Ha; Jooho Moon; Antonio Facchetti; Tobin J. Marks
• Keywords: Semiconductors; 0103 physical sciences; Temperature; Gallium; 02 engineering and technology; Zinc Oxide; 0210 nano-technology; Indium; 01 natural sciences

Ga doping in indium zinc oxide (IZO)-based amorphous-oxide semiconductors (AOSs) promotes the formation of oxide-lattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on temperature and AOS composition are analyzed chemical role clarified, as required solution-processed, low-temperature-annealed AOSs. Detailed facts importance to specialist readers published "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made available submitted by authors. Please note: publisher responsible content functionality any supporting information supplied Any queries (other than missing content) should be directed corresponding author article.