Flexible Low‐Voltage Organic Transistors and Circuits Based on a High‐Mobility Organic Semiconductor with Good Air Stability

• DOI: 10.1002/adma.200902740
• Publication Date: 2009-12-16T08:42:22Z
• Authors: Ute Zschieschang; Frederik Ante; Tatsuya Yamamoto; Kazuo Takimiya; Hirokazu Kuwabara; Masaaki Ikeda; Tsuyoshi Sekitani; Takao Someya; Klaus Kern; Hagen Klauk
• Keywords: Organic semiconductor

Flexible transistors and circuits based on dinaphtho-[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with large ionization potential (5.4 eV), are reported. The have mobility of 0.6 cm2 V−1 s−1 the ring oscillators stage delay 18 µs. Due to excellent stability semiconductor, devices maintain 50% their initial performance for period 8 months in ambient air. Detailed facts importance specialist readers published as "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made available submitted by authors. Please note: publisher is responsible content functionality any supporting information supplied Any queries (other than missing content) should be directed corresponding author article.