Conjugated‐Polymer‐Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect

• DOI: 10.1002/adma.200903469
• Publication Date: 2010-01-07T17:46:15Z
• Authors: Xiao‐Dong Zhuang; Yu Chen; Gang Liu; Pei‐Pei Li; Chun‐Xiang Zhu; En‐Tang Kang; Koon‐Gee Noeh; Bin Zhang; Jin‐Hui Zhu; Yong‐Xi Li
• Keywords: Triphenylamine; Bistability; Indium tin oxide; Non-Volatile Memory

An ITO/TPAPAM-GO/Al memory device (see figure; ITO = indium tin oxide, TPAPAM-GO graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable effect turn-on voltage of −1.0 V an ON/OFF-state current ratio more than 103. Both ON OFF state are stable under constant stress survive up to 108 read cycles at V.