Single ZnO Nanowire/p‐type GaN Heterojunctions for Photovoltaic Devices and UV Light‐Emitting Diodes

• DOI: 10.1002/adma.201000985
• Publication Date: 2010-07-22T12:25:22Z
• Authors: Ya‐Qing Bie; Zhi‐Min Liao; Peng‐Wei Wang; Yang‐Bo Zhou; Xiao‐Bing Han; Yu Ye; Qing Zhao; Xiao‐Song Wu; Lun Dai; Jun Xu; Li‐Wen Sang; Jun‐Jing Deng; K. Laurent; Y. Leprince‐Wang; Da‐Peng Yu
• Keywords: Semiconductors; Nanowires; Ultraviolet Rays; Lasers; Gallium; 02 engineering and technology; Zinc Oxide; 0210 nano-technology; 7. Clean energy

We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.