Single ZnO Nanowire/p‐type GaN Heterojunctions for Photovoltaic Devices and UV Light‐Emitting Diodes
Open-circuit voltage
DOI:
10.1002/adma.201000985
Publication Date:
2010-07-22T12:25:22Z
AUTHORS (15)
ABSTRACT
We fabricate heterojunctions consisting of a single n-type ZnO nanowire and p-type GaN film. The photovoltaic effect exhibits open-circuit voltages ranging from 2 to 2.7 V, maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the are demonstrated.
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