Single ZnO Nanowire/p‐type GaN Heterojunctions for Photovoltaic Devices and UV Light‐Emitting Diodes

Open-circuit voltage
DOI: 10.1002/adma.201000985 Publication Date: 2010-07-22T12:25:22Z
ABSTRACT
We fabricate heterojunctions consisting of a single n-type ZnO nanowire and p-type GaN film. The photovoltaic effect exhibits open-circuit voltages ranging from 2 to 2.7 V, maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the are demonstrated.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (33)
CITATIONS (73)