Electrical Transport and High‐Performance Photoconductivity in Individual ZrS2 Nanobelts

• DOI: 10.1002/adma.201001413
• Publication Date: 2010-08-22T04:49:40Z
• Authors: Liang Li; Xiaosheng Fang; Tianyou Zhai; Meiyong Liao; Ujjal K Gautam; Xingcai Wu; Yasuo Koide; Yoshio Bando; Dmitri Golberg
• Keywords: Light; Transistors, Electronic; Electric Conductivity; Temperature; Metal Nanoparticles; Transistors; Zirconium/*chemistry; 530; 01 natural sciences; 7. Clean energy; 0104 chemical sciences; Electronic; Metal Nanoparticles/*chemistry/ultrastructure; Zirconium

Individual ZrS(2)-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS(2)-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.