Fundamental Theory of Piezotronics

• DOI: 10.1002/adma.201100906
• Publication Date: 2011-05-11T09:45:30Z
• Authors: Yan Zhang; Ying Liu; Zhong Lin Wang
• Keywords: Interfacing

Abstract Due to polarization of ions in crystals with noncentral symmetry, such as ZnO, GaN, and InN, a piezoelectric potential (piezopotential) is created the crystal when stress applied. Electronics fabricated using inner‐crystal piezopotential gate voltage tune or control charge transport behavior across metal/semiconductor interface p–n junction are called piezotronics. This different from basic design complimentary metal oxide semiconductor (CMOS) field‐effect transistors has applications force pressure triggered controlled electronic devices, sensors, microelectromechanical systems (MEMS), human‐computer interfacing, nanorobotics, touch‐pad technologies. Here, theory piezotronic devices investigated. In addition presenting formal theoretical frame work, analytical solutions presented for cases including metal–semiconductor contact junctions under simplified conditions. Numerical calculations given predicting current–voltage characteristics general transistor: metal–ZnO nanowire–metal device. study provides important insight into working principles well providing guidance device design.