Melanin Layer on Silicon: an Attractive Structure for a Possible Exploitation in Bio‐Polymer Based Metal–Insulator–Silicon Devices
Ambipolar diffusion
DOI:
10.1002/adma.201101358
Publication Date:
2011-06-14T08:46:13Z
AUTHORS (8)
ABSTRACT
Synthetic melanin based metal–insulator–semiconductor devices are fabricated for the first time thanks to silicon surface wettability modification by using dielectric barrier discharge plasma. Ambipolar charge trapping in air and ion drift mechanisms under vacuum identified capacitance–voltage hysteresis loops. These results aim foresee possible integration of synthetic layers as a novel capacitor organic polymer devices. Detailed facts importance specialist readers published "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made available submitted authors. Please note: The publisher is responsible content functionality any supporting information supplied Any queries (other than missing content) should be directed corresponding author article.
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