Single‐Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping
Bilayer graphene
DOI:
10.1002/adma.201103411
Publication Date:
2011-12-12T07:43:24Z
AUTHORS (11)
ABSTRACT
Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in single-gate device structure. Detailed facts importance specialist readers are published as "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made available submitted by authors. Please note: The publisher responsible for content functionality any supporting information supplied Any queries (other than missing content) should be directed corresponding author article.
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