Near‐Surface Spectrally Stable Nitrogen Vacancy Centres Engineered in Single Crystal Diamond

• DOI: 10.1002/adma.201201074
• Publication Date: 2012-05-25T08:30:38Z
• Authors: Alastair Stacey; David A. Simpson; Timothy J. Karle; Brant C. Gibson; Victor M. Acosta; Zhihong Huang; Kai Mei C. Fu; Charles Santori; Raymond G. Beauso...; Liam P. McGuinness; Kumaravelu Ganesan; Snjezana Tomljeno...; Andrew D. Greentree; Steven Prawer
• Keywords: Laser linewidth; Quantum information processing

A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth the engineered NVs are as low 140 MHz, at temperatures below 12 K, while spin properties a level suitable quantum memory and register applications. This methodology NV fabrication an important step toward scalable practical based photonic devices information processing. Detailed facts importance to specialist readers published "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made available submitted by authors. Please note: publisher responsible content functionality any supporting supplied Any queries (other than missing content) should be directed corresponding author article.