Giant Electrostriction in Gd‐Doped Ceria

Electrostriction
DOI: 10.1002/adma.201202270 Publication Date: 2012-08-30T08:13:12Z
ABSTRACT
Gd-doped CeO(2) exhibits an anomalously large electrostriction effect generating stress that can reach 500 MPa. In situ XANES measurements indicate the develops in response to rearrangement of cerium-oxygen vacancy pairs. This mechanism is fundamentally different from materials currently use and suggests ceria a representative new family high-performance electromechanical materials.
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