Thin Films of Magnetically Doped Topological Insulator with Carrier‐Independent Long‐Range Ferromagnetic Order

• DOI: 10.1002/adma.201203493
• Publication Date: 2013-01-18T08:57:45Z
• Authors: Cui‐Zu Chang; Jinsong Zhang; Minhao Liu; Zuocheng Zhang; Xiao Feng; Kang Li; Li‐Li Wang; Xi Chen; Xi Dai; Zhong Fang; Xiao‐Liang Qi; Shou‐Cheng Zhang; Yayu Wang; Ke He; Xu‐Cun Ma; Qi‐Kun Xue
• Keywords: topological insulator; field effect; anomalous hall effect; molecular beam epitaxy; 0103 physical sciences; ferromagnetic insulator; 01 natural sciences

Thin films of magnetically doped topological insulators Cr(0.22) (Bi(x) Sb(1-x) )(1.78) Te(3) are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.