Sub‐10 nm Graphene Nanoribbon Array Field‐Effect Transistors Fabricated by Block Copolymer Lithography

• DOI: 10.1002/adma.201300813
• Publication Date: 2013-06-25T07:58:50Z
• Authors: Jeong Gon Son; Myungwoo Son; Kyeong‐Joo Moon; Byoung Hun Lee; Jae‐Min Myoung; Michael S. Strano; Moon‐Ho Ham; Caroline A. Ross
• Keywords: Nylons; Transistors, Electronic; Nanotubes, Carbon; Graphite; Dimethylpolysiloxanes; Particle Size; 01 natural sciences; 0104 chemical sciences

Sub-10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD-grown graphene. A mask is used made by the directed self-assembly of a cylindrical PS-b-PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface-modified removable polymeric templates, and high Flory-Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed. This leads to a higher on/off ratio and stronger temperature dependence of the current for nanoribbon FETs, and a photocurrent which is 30 times larger compared to unpatterned graphene.