A Multilevel Intermediate‐Band Solar Cell by InGaN/GaN Quantum Dots with a Strain‐Modulated Structure

• DOI: 10.1002/adma.201304335
• Publication Date: 2013-12-06T08:49:08Z
• Authors: Liwen Sang; Meiyong Liao; Qifeng Liang; Masaki Takeguchi; Benjamin Dierre; Bo Shen; Takashi Sekiguchi; Yasuo Koide; Masatomo Sumiya
• Keywords: 13. Climate action; 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences; 7. Clean energy

Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB solar cell shows a wide photovoltaic response from the UV to the near-IR region. This work opens up an interesting opportunity for high-efficiency IB solar cells in the photovoltaics field.